共查询到20条相似文献，搜索用时 703 毫秒
1.
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor 总被引：1，自引：0，他引：1
Nomura K Ohta H Ueda K Kamiya T Hirano M Hosono H 《Science (New York, N.Y.)》2003,300(5623):1269-1272
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics. 相似文献
2.
A GaAs-based transistor, analogous to commercial silicon devices, has been fabricated with vapor-deposited cubic GaS as the insulator material. The n-channel, depletion mode, GaAs field-effect transistor shows, in addition to classical transistor characteristics, a channel mobility of 4665.6 square centimeters per volt per second, an interfacial trap density of 10(11) per electron volt per square centimeter, and a transconductance of 7 millisiemens for a 5-micrometer gate length at a gate voltage of 8 volts. Furthermore, the GaAs transistor shows an on-to-off resistance ratio comparable to that of commercial devices. 相似文献
3.
Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics. 相似文献
4.
High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 10(4) square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 10(11) per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as approximately 2 kelvin. 相似文献
5.
We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors. 相似文献
6.
A promising approach for detecting biomolecules follows their binding to immobilized probe molecules on microfabricated cantilevers; binding causes surface stresses that bend the cantilever. We measured this deflection, which is on the order of tens of nanometers, by embedding a metal-oxide semiconductor field-effect transistor (MOSFET) into the base of the cantilever and recording decreases in drain current with deflections as small as 5 nanometers. The gate region of the MOSFET responds to surface stresses and thus is embedded in silicon nitride so as to avoid direct contact with the sample solution. This approach, which offers low noise, high sensitivity, and direct readout, was used to detect specific binding events with biotin and antibodies. 相似文献
7.
Li L Richter C Paetel S Kopp T Mannhart J Ashoori RC 《Science (New York, N.Y.)》2011,332(6031):825-828
Increases in the gate capacitance of field-effect transistor structures allow the production of lower-power devices that are compatible with higher clock rates, driving the race for developing high-κ dielectrics. However, many-body effects in an electronic system can also enhance capacitance. Onto the electron system that forms at the LaAlO(3)/SrTiO(3) interface, we fabricated top-gate electrodes that can fully deplete the interface of all mobile electrons. Near depletion, we found a greater than 40% enhancement of the gate capacitance. Using an electric-field penetration measurement method, we show that this capacitance originates from a negative compressibility of the interface electron system. Capacitance enhancement exists at room temperature and arises at low electron densities, in which disorder is strong and the in-plane conductance is much smaller than the quantum conductance. 相似文献
8.
The electrical properties of organic molecular crystals, such as polyacenes or C60, can be tuned from insulating to superconducting by application of an electric field. By structuring the gate electrode of such a field-effect switch, the charge carrier density, and therefore also the superfluid density, can be modulated. Hence, weak links that behave like Josephson junctions can be fabricated between two superconducting regions. The coupling between the superconducting regions can be tuned and controlled over a wide range by the applied gate bias. Such devices might be used in superconducting circuits, and they are a useful scientific tool to study superconducting material parameters, such as the superconducting gap, as a function of carrier concentration or transition temperature. 相似文献
9.
Integrated optoelectronic devices based on conjugated polymers 总被引：1，自引：0，他引：1
An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10(6). The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays. 相似文献
10.
Pan LS Pianetta P Kania DR Han S Landen OL Ager JW Landstrass M 《Science (New York, N.Y.)》1992,255(5046):830-833
Polycrystalline diamond films synthesized by microwave-assisted chemical vapor deposition (MACVD) were examined with transient photoconductivity, and two fundamental electrical transport properties, the carrier mobility and lifetime, were measured. The highest mobility measured is 50 centimeters squared per volt per second at low initial carrier densities (<10(15) per cubic centimeter). Electron-hole scattering causes the carrier mobility to decrease at higher carrier densities. Although not measured directly, the carrier lifetime was inferred to be 40 picoseconds. The average drift length of the carriers is smaller than the average grain size and appears to be limited by defects within the grains. The carrier mobility in the MACVD films is higher than values measured in lower quality dc-plasma films but is much smaller than that of single-crystal natural diamond. 相似文献
11.
We report here on a novel realization of a field-effect device that allows switching between insulating and superconducting states, which is the widest possible variation of electrical properties of a material. We chose C(60) as the active material because of its low surface state density and observed superconductivity in alkali metal-doped C(60). We induced three electrons per C(60) molecule in the topmost molecular layer of a crystal with the field-effect device, creating a superconducting switch operating up to 11 kelvin. An insulator was thereby transformed into a superconductor. This technique offers new opportunities for the study of superconductivity as a function of carrier concentration. 相似文献
12.
Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) performance discontinuities at well-defined growth temperatures. The changes reflect the higher chain mobility of the dielectric in its rubbery state and are independent of dielectric film thickness. Optimization of organic TFT performance must recognize this fundamental buried interface viscoelasticity effect, which is detectable in the current-voltage response. 相似文献
13.
McCarthy MA Liu B Donoghue EP Kravchenko I Kim DY So F Rinzler AG 《Science (New York, N.Y.)》2011,332(6029):570-573
Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels. 相似文献
14.
汉城湖绿化区土壤养分的分析与评价 总被引：1，自引：0，他引：1
采用野外调查及室内分析方法,对汉城湖12个绿化区域土壤养分进行了测定分析,并运用相关分析法和主成分分析法进行了综合评价,评价指标主要有pH、有机质、硝态氮、铵态氮、碱解氮、速效磷、速效钾、全氮、全磷、全钾。结果表明,1）有机质和氮素普遍缺乏;磷素偏低,钾素丰富;pH偏弱碱性;碱解氮、速效磷、速效钾等养分的空间分布很不均衡。2）在0~20 cm表层土壤中,属于高水平的样区有神明台区域和铜像区域,属于较高水平的样区有公司门口区域、五号桥区域、福迪汽贸区域、水车广场区域和四号桥区域,属于中等水平的样区有中兴阁区域、一号桥区域、围挡区域和榆园区域,属于较低水平的样区为三号桥区域;20~60 cm土层中,属于高水平的样区为神明台区域,属于较高水平的样区有铜像区域、福迪汽贸区域、水车广场区域、中兴阁区域、一号桥区域和三号桥区域,属于中等水平的样区有五号桥区域、榆园区域、公司门口区域、四号桥区域和围挡区域。3）除三号桥区域的0~20 cm表层土壤,其20~60 cm土层和其他11个区域的2层土壤养分综合指标值IFI值均>0.4,即达到中等水平及以上。 相似文献
15.
Sundar VC Zaumseil J Podzorov V Menard E Willett RL Someya T Gershenson ME Rogers JA 《Science (New York, N.Y.)》2004,303(5664):1644-1646
We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene. 相似文献
16.
研究了有机酸对镉在土壤矿物上吸附特征的影响,结果表明:有机酸对镉在矿物上吸附的影响基本上是一致的:随着胡敏酸浓度的增加,镉的吸附量迅速增大;对低分子量有机酸(草酸、乙酸、柠檬酸等)而言,在浓度较低时,镉的吸附量随着有机酸浓度的增加而有所增大,但随着浓度的增加,镉的吸附量逐渐降低.存在胡敏酸时,高岭石、针铁矿和三羟基铝石对镉的吸附率随着pH的升高而迅速增大,而且吸附率一直高于其它条件下的吸附率,pH>5.0时,吸附率接近100%.在存在低分子量有机酸(草酸、乙酸、柠檬酸等)的情况下,在pH<5.5时,高岭石、针铁矿和三羟基铝石对镉的吸附率随着pH的升高有较大的差异,与矿物种类及有机酸类型有着密切的关系,之后随pH的升高而迅速增大. 相似文献
17.
C60 single crystals have been intercalated with CHCl3 and CHBr3 in order to expand the lattice. High densities of electrons and holes have been induced by gate doping in a field-effect transistor geometry. At low temperatures, the material turns superconducting with a maximum transition temperature of 117 K in hole-doped C60/CHBr3. The increasing spacing between the C60 molecules follows the general trend of alkali metal-doped C60 and suggests routes to even higher transition temperatures. 相似文献
18.
A neuron-silicon junction: a Retzius cell of the leech on an insulated-gate field-effect transistor 总被引：6，自引：0，他引：6
An identified neuron of the leech, a Retzius cell, has been attached to the open gate of a p-channel field-effect transistor. Action potentials, spontaneous or stimulated, modulate directly the source-drain current in silicon. The electronic signals match the shape of the action potential. The average voltage on the gate was up to 25 percent of the intracellular voltage change. Occasionally weak signals that resemble the first derivative of the action potential were observed. The junctions can be described by a model that includes capacitive coupling of the plasma membrane and the gate oxide and that accounts for variable resistance of the seal. 相似文献
19.
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are alpha-hexathienylene (alpha-6T) and C(60). The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of alpha-6T and C(60). The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits. 相似文献
20.
海南省琼海市农村生活垃圾产生特征及就地处理实践 总被引：11，自引：5，他引：6
以海南省琼海市某村为研究对象,通过运行新建的农村生活垃圾收集处理示范丁程,结合入户调查村民的社会经济状况.研究了海南省农村生活垃圾产生特征,并探讨农村生活垃圾就地处理的可行性.结果发现,以实际居住人口计的农村生活垃圾产生率约为0.227 kg·capita~(-1)·d~(-1);其物理组分以易腐垃圾为主,占总量的40.4%±6.3%;惰性垃圾占总量的30.8%±6.2%;有毒有害生活垃圾量极少,占总量的0.1%.示范运行结果表明,以混合收集,人工分拣,可堆肥垃圾就地堆肥、惰性垃圾集中处置为特征的农村生活垃圾就地处理技术,减量率达到50%左右,无害化率达到100%,堆肥产品质量符合现行标准要求,具有技术可行性.示范工程的运行成本为304.5元·t~(-1),其中,收集239元·t~(-1),分拣和堆肥65.5元·t~(-1).按户籍人口计,年人均18.7元,仅为村民年纯收入的0.4%;示范工程运行得到村民的支持与欢迎,村民对垃圾收集处理付费支付意愿高达95%,表明实行村民付费解决长期运行费用具有可行性. 相似文献