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1.
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.  相似文献   

2.
The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100 degrees C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250 degrees C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86 degrees , 106 degrees , and 119 degrees C with hot-side temperatures set at 50 degrees, 100 degrees, and 150 degrees C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.  相似文献   

3.
We report the observation of unusually strong and systematic changes in the electron transport in metallic single-walled carbon nanotubes that are undergoing collisions with inert gas atoms or small molecules. At fixed gas temperature and pressure, changes in the resistance and thermopower of thin films are observed that scale as roughly M(1/3), where M is the mass of the colliding gas species (He, Ar, Ne, Kr, Xe, CH4, and N2). Results of molecular dynamics simulations are also presented that show that the maximum deformation of the tube wall upon collision and the total energy transfer between the colliding atom and the nanotube also exhibit a roughly M(1/3) dependence. It appears that the transient deformation (or dent) in the tube wall may provide a previously unknown scattering mechanism needed to explain the atom collision-induced changes in the electrical transport.  相似文献   

4.
Ultracold atom magnetic field microscopy enables the probing of current flow patterns in planar structures with unprecedented sensitivity. In polycrystalline metal (gold) films, we observed long-range correlations forming organized patterns oriented at +/-45 degrees relative to the mean current flow, even at room temperature and at length scales larger than the diffusion length or the grain size by several orders of magnitude. The preference to form patterns at these angles is a direct consequence of universal scattering properties at defects. The observed amplitude of the current direction fluctuations scales inversely to that expected from the relative thickness variations, the grain size, and the defect concentration, all determined independently by standard methods. Ultracold atom magnetometry thus enables new insight into the interplay between disorder and transport.  相似文献   

5.
Inelastic helium atom scattering has been used to measure the phonons on a stepped metallic crystalline surface, Ni(977). When the scattering plane is oriented parallel to the step edges and perpendicular to the terraces, two branches of step-induced phonons are observed. These branches are identified as transversely polarized, step-localized modes that propagate along the step edge. Analysis reveals significant anisotropy in the force field near the step edge, with all forces near the step edge being substantially smaller than in the bulk. Such measurements provide valuable information on metallic bonding and interface stability near extended surface defects.  相似文献   

6.
We simultaneously determined the physical structure and optical transition energies of individual single-walled carbon nanotubes by combining electron diffraction with Rayleigh scattering spectroscopy. These results test fundamental features of the excited electronic states of carbon nanotubes. We directly verified the systematic changes in transition energies of semiconducting nanotubes as a function of their chirality and observed predicted energy splittings of optical transitions in metallic nanotubes.  相似文献   

7.
Rayleigh scattering spectra were obtained from individual single-walled carbon nanotubes with the use of a laser-generated visible and near-infrared supercontinuum. This diagnostic method is noninvasive and general for nanoscale objects. The approach permits clear identification of excited states in arbitrary metallic and semiconducting nanotubes. We analyzed spectral lineshapes in relation to the role of excitonic effects and correlated the results with Raman scattering data on individual tubes. The nanotube structure remained the same over distances of tens of micrometers. Small nanotube bundles retained distinct Rayleigh spectroscopic signatures of their component nanotubes, thus allowing the probing of nanotube-nanotube interactions.  相似文献   

8.
The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assembled carbon nanotube field-effect transistor operating at room temperature. A DNA scaffold molecule provides the address for precise localization of a semiconducting single-wall carbon nanotube as well as the template for the extended metallic wires contacting it.  相似文献   

9.
Conductivity measurements on double-stranded DNA molecules deposited by a combing process across a submicron slit between rhenium/carbon metallic contacts reveal conduction to be ohmic between room temperature and 1 kelvin. The resistance per molecule is less than 100 kilohm and varies weakly with temperature. Below the superconducting transition temperature (1 kelvin) of the contacts, proximity-induced superconductivity is observed. These results imply that DNA molecules can be conducting down to millikelvin temperature and that phase coherence is maintained over several hundred nanometers.  相似文献   

10.
An array of aligned carbon nanotubes (CNTs) was incorporated across a polymer film to form a well-ordered nanoporous membrane structure. This membrane structure was confirmed by electron microscopy, anisotropic electrical conductivity, gas flow, and ionic transport studies. The measured nitrogen permeance was consistent with the flux calculated by Knudsen diffusion through nanometer-scale tubes of the observed microstructure. Data on Ru(NH3)6(3+) transport across the membrane in aqueous solution also indicated transport through aligned CNT cores of the observed microstructure. The lengths of the nanotubes within the polymer film were reduced by selective electrochemical oxidation, allowing for tunable pore lengths. Oxidative trimming processes resulted in carboxylate end groups that were readily functionalized at the entrance to each CNT inner core. Membranes with CNT tips that were functionalized with biotin showed a reduction in Ru(NH3)6(3+) flux by a factor of 15 when bound with streptavidin, thereby demonstrating the ability to gate molecular transport through CNT cores for potential applications in chemical separations and sensing.  相似文献   

11.
采用第一性原理的密度泛函理论计算方法,研究了2种不同分布的双原子空位缺陷(平行于管轴和斜交于管轴)对金属型(12,0)碳纳米管量子电子特性的影响。研究结果表明,平行于管轴的五边形-八边形-五边形(5-8-5)缺陷的转变能是最小的,是最稳定的缺陷结构分布;平行于管轴的5-8-5缺陷和斜交于管轴5-8-5缺陷都在价带部分引入了出现2个电子背散射中心,这对电子输运非常不利;斜交于管轴5-8-5缺陷比平行于管轴5-8-5缺陷对电导的抑制作用更大,这是由于斜交于管轴5-8-5缺陷破环了碳纳米管的轴向对称性。  相似文献   

12.
Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or "ropes" of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.  相似文献   

13.
Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics.  相似文献   

14.
Li X  Wang X  Zhang L  Lee S  Dai H 《Science (New York, N.Y.)》2008,319(5867):1229-1232
We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature.  相似文献   

15.
We describe the operation of, and demonstrate logic functionality in, networks of physically coupled, nanometer-scale magnets designed for digital computation in magnetic quantum-dot cellular automata (MQCA) systems. MQCA offer low power dissipation and high integration density of functional elements and operate at room temperature. The basic MQCA logic gate, that is, the three-input majority logic gate, is demonstrated.  相似文献   

16.
A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.  相似文献   

17.
Super plastic bulk metallic glasses at room temperature   总被引:1,自引:0,他引:1  
In contrast to the poor plasticity that is usually observed in bulk metallic glasses, super plasticity is achieved at room temperature in ZrCuNiAl synthesized through the appropriate choice of its composition by controlling elastic moduli. Microstructures analysis indicates that the super plastic bulk metallic glasses are composed of hard regions surrounded by soft regions, which enable the glasses to undergo true strain of more than 160%. This finding is suggestive of a solution to the problem of brittleness in, and has implications for understanding the deformation mechanism of, metallic glasses.  相似文献   

18.
Molecular metals normally require charge transfer between two different chemical species. We prepared crystals of [Ni(tmdt)2] (tmdt, trimethylenetetrathiafulvalenedithiolate) and carried out crystal structure analyses and resistivity measurements. The analyses and measurements revealed that these single-component molecular crystals are metallic from room temperature down to 0.6 kelvin. Ab initio molecular orbital calculations suggested that pi molecular orbitals form conduction bands. The compact molecular arrangement, intermolecular overlap integrals of the highest occupied and lowest unoccupied molecular orbitals, and tight-binding electronic band structure calculation revealed that [Ni(tmdt)2] is a three-dimensional synthetic metal composed of planar molecules.  相似文献   

19.
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.  相似文献   

20.
Junctions consisting of two crossed single-walled carbon nanotubes were fabricated with electrical contacts at each end of each nanotube. The individual nanotubes were identified as metallic (M) or semiconducting (S), based on their two-terminal conductances; MM, MS, and SS four-terminal devices were studied. The MM and SS junctions had high conductances, on the order of 0.1 e(2)/h (where e is the electron charge and h is Planck's constant). For an MS junction, the semiconducting nanotube was depleted at the junction by the metallic nanotube, forming a rectifying Schottky barrier. We used two- and three-terminal experiments to fully characterize this junction.  相似文献   

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