共查询到20条相似文献，搜索用时 375 毫秒
1.
The motion of magnetic domain walls induced by spin-polarized current has considerable potential for use in magnetic memory and logic devices. Key to the success of these devices is the precise positioning of individual domain walls along magnetic nanowires, using current pulses. We show that domain walls move surprisingly long distances of several micrometers and relax over several tens of nanoseconds, under their own inertia, when the current stimulus is removed. We also show that the net distance traveled by the domain wall is exactly proportional to the current pulse length because of the lag derived from its acceleration at the onset of the pulse. Thus, independent of its inertia, a domain wall can be accurately positioned using properly timed current pulses. 相似文献
2.
Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices. 相似文献
3.
Thomas L Hayashi M Jiang X Moriya R Rettner C Parkin S 《Science (New York, N.Y.)》2007,315(5818):1553-1556
The current-induced motion of magnetic domain walls confined to nanostructures is of interest for applications in magnetoelectronic devices in which the domain wall serves as the logic gate or memory element. The injection of spin-polarized current below a threshold value through a domain wall confined to a pinning potential results in its precessional motion within the potential well. We show that by using a short train of current pulses, whose length and spacing are tuned to this precession frequency, the domain wall's oscillations can be resonantly amplified. This makes possible the motion of domain walls with much reduced currents, more than five times smaller than in the absence of resonant amplification. 相似文献
4.
Krivorotov IN Emley NC Sankey JC Kiselev SI Ralph DC Buhrman RA 《Science (New York, N.Y.)》2005,307(5707):228-231
We present time-resolved measurements of gigahertz-scale magnetic dynamics caused by torque from a spin-polarized current. By working in the time domain, we determined the motion of the magnetic moment throughout the process of spin-transfer-driven switching, and we measured turn-on times of steady-state precessional modes. Time-resolved studies of magnetic relaxation allow for the direct measurement of magnetic damping in a nanomagnet and prove that this damping can be controlled electrically using spin-polarized currents. 相似文献
5.
Yamanouchi M Ieda J Matsukura F Barnes SE Maekawa S Ohno H 《Science (New York, N.Y.)》2007,317(5845):1726-1729
Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. For the ferromagnetic semiconductor (Ga,Mn)As, we have measured and compared such motions in the thermally activated subthreshold, or "creep," regime, where the velocity obeys an Arrhenius scaling law. Within this law, the clearly different exponents of the current and field reflect different universality classes, showing that the drive mechanisms are fundamentally different. 相似文献
6.
We present direct evidence for complex p-wave order parameter symmetry and the presence of dynamical chiral order parameter domains of the form px +/- ipy in the ruthenate superconductor Sr2RuO4. The domain structure creates differences in the magnetic field modulation of the critical current of Josephson junctions fabricated on orthogonal faces of Sr2RuO4 single crystals. Transitions between the chiral states of a domain or the motion of domain walls separating them generates telegraph noise in the critical current as a function of magnetic field or time and is responsible for hysteresis observed in field sweeps of the critical current. The presence of such domains confirms the p-wave triplet spin and complex (broken time-reversal symmetry) nature of the superconducting pairing state in Sr2RuO4. 相似文献
7.
Krause S Berbil-Bautista L Herzog G Bode M Wiesendanger R 《Science (New York, N.Y.)》2007,317(5844):1537-1540
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism. 相似文献
8.
McCartney MR Dunin-Borkowski RE Scheinfein MR Smith DJ Gider S Parkin SS 《Science (New York, N.Y.)》1999,286(5443):1337-1340
Spin-dependent tunnel junctions based on magnetically hard and soft ferromagnetic layers separated by a thin insulating barrier have emerged as prime candidates for information storage. However, the observed instability of the magnetically hard reference layer, leading to magnetization decay during field cycling of the adjacent soft layer, is a serious concern for future device applications. Using Lorentz electron microscopy and micromagnetic simulations, the hard-layer decay was found to result from large fringing fields surrounding magnetic domain walls in the magnetically soft layer. The formation and motion of these walls causes statistical flipping of magnetic moments in randomly oriented grains of the hard layer, with a progressive trend toward disorder and eventual demagnetization. 相似文献
9.
T Kimura Y Tomioka H Kuwahara A Asamitsu M Tamura Y Tokura 《Science (New York, N.Y.)》1996,274(5293):1698-1701
The current-perpendicular-to-plane magnetoresistance (CPP-MR) has been investigated for the layered manganite, La2-2xSr1+2xMn2O7 (x = 0.3), which is composed of the ferromagnetic-metallic MnO2 bilayers separated by nonmagnetic insulating block layers. The CPP-MR is extremely large (10(4) percent at 50 kilo-oersted) at temperatures near above the three-dimensional ordering temperature (Tc approximately 90 kelvin) because of the field-induced coherent motion between planes of the spin-polarized electrons. Below Tc, the interplane magnetic domain boundary on the insulating block layer serves as the charge-transport barrier, but it can be removed by a low saturation field, which gives rise to the low-field tunneling MR as large as 240 percent. 相似文献
10.
Eom J Cho H Kang W Campman KL Gossard AC Bichler M Wegscheider W 《Science (New York, N.Y.)》2000,289(5488):2320-2323
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction nu = 1/3) and spin-unpolarized (nu = 2/5) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic. 相似文献
11.
采用电化学沉积方法,在多孔型阳极氧化铝模板中成功制备出Co基磁性纳米线,包括Co纳米线、Cu纳米线和Co/Cu一维纳米多层膜,并对其微观形貌、成分结构和磁学性质进行了研究;讨论了Co~(2+)和Cu~(2+)分别沉积和共同沉积对其晶体结构的影响,提出Co与Cu~(2+)的交换反应导致形成Co/Cu原子混合层,从而影响Co/Cu一维纳米多层膜的结晶情况和Co/Cu一维纳米多层膜的磁各向异性. 相似文献
12.
Crook R Prance J Thomas KJ Chorley SJ Farrer I Ritchie DA Pepper M Smith CG 《Science (New York, N.Y.)》2006,312(5778):1359-1362
We present data from an induced gallium arsenide (GaAs) quantum wire that exhibits an additional conductance plateau at 0.5(2e2/h), where e is the charge of an electron and h is Planck's constant, in zero magnetic field. The plateau was most pronounced when the potential landscape was tuned to be symmetric by using low-temperature scanning-probe techniques. Source-drain energy spectroscopy and temperature response support the hypothesis that the origin of the plateau is the spontaneous spin-polarization of the transport electrons: a ferromagnetic phase. Such devices may have applications in the field of spintronics to either generate or detect a spin-polarized current without the complications associated with external magnetic fields or magnetic materials. 相似文献
13.
Ono T Miyajima H Shigeto K Mibu K Hosoito N Shinjo T 《Science (New York, N.Y.)》1999,284(5413):468-470
The motion of a magnetic domain wall in a submicrometer magnetic wire was detected by use of the giant magnetoresistance effect. Magnetization reversal in a submicrometer magnetic wire takes place by the propagation of a magnetic domain wall, which can be treated as a "particle." The propagation velocity of the magnetic domain wall was determined as a function of the applied magnetic field. 相似文献
14.
The spin-polarized organic light-emitting diode (spin-OLED) has been a long-sought device within the field of organic spintronics. We designed, fabricated, and studied a spin-OLED with ferromagnetic electrodes that acts as a bipolar organic spin valve (OSV), based on a deuterated derivative of poly(phenylene-vinylene) with small hyperfine interaction. In the double-injection limit, the device shows ~1% spin valve magneto-electroluminescence (MEL) response, which follows the ferromagnetic electrode coercive fields and originates from the bipolar spin-polarized space charge-limited current. In stark contrast to the response properties of homopolar OSV devices, the MEL response in the double-injection device is practically independent of bias voltage, and its temperature dependence follows that of the ferromagnetic electrode magnetization. Our findings provide a pathway for organic displays controlled by external magnetic fields. 相似文献
15.
Scholl A 《Science (New York, N.Y.)》2000,288(5472):1762-1763
The drive to smaller and smaller computational devices demands control over the structure, composition, and magnetic properties of materials on a sub-100-nanometer scale. In his Perspective, Scholl highlights a report by Heinze et al., who have been able to image an antiferromagnetic Mn monolayer at atomic resolution using a technique called spin-polarized scanning tunneling microscopy. Because of its unrivaled resolution, this technique is likely to provide insights into magnetic interactions that are of fundamental importance to magnetic devices. 相似文献
16.
利用直流电化学沉积法通过调节沉积参数在多孔阳极氧化铝模板中沉积制备出了一系列不同成分和结构的磁性CoCu纳米线阵列.XRD和TEM的结果显示,沉积溶液的pH值对纳米线的成分比例和相结构的影响表现出了明显的规律性.笔者认为pH值对纳米线成分比例和相结构的控制主要源于它对溶液中Co^2＋沉积速率的影响.基于此沉积规律,沉积出了立方结构与六角结构共存的复相结构的CoCu纳米线.由于复相结构的CoCu纳米线中包含较多的相边界,因此它们具有远好于单相结构CoCu纳米线的磁性,其矫顽力和剩磁比均是单相结构纳米线的3倍. 相似文献
17.
We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed. 相似文献
18.
Heinze S Bode M Kubetzka A Pietzsch O Nie X Blugel S Wiesendanger R 《Science (New York, N.Y.)》2000,288(5472):1805-1808
A two-dimensional antiferromagnetic structure within a pseudomorphic monolayer film of chemically identical manganese atoms on tungsten(110) was observed with atomic resolution by spin-polarized scanning tunneling microscopy at 16 kelvin. A magnetic superstructure changes the translational symmetry of the surface lattice with respect to the chemical unit cell. It is shown, with the aid of first-principles calculations, that as a result of this, spin-polarized tunneling electrons give rise to an image corresponding to the magnetic superstructure and not to the chemical unit cell. These investigations demonstrate a powerful technique for the understanding of complicated magnetic configurations of nanomagnets and thin films engineered from ferromagnetic and antiferromagnetic materials used for magnetoelectronics. 相似文献
19.
Control of magnetism on the atomic scale is becoming essential as data storage devices are miniaturized. We show that antiferromagnetic nanostructures, composed of just a few Fe atoms on a surface, exhibit two magnetic states, the Néel states, that are stable for hours at low temperature. For the smallest structures, we observed transitions between Néel states due to quantum tunneling of magnetization. We sensed the magnetic states of the designed structures using spin-polarized tunneling and switched between them electrically with nanosecond speed. Tailoring the properties of neighboring antiferromagnetic nanostructures enables a low-temperature demonstration of dense nonvolatile storage of information. 相似文献
20.
Goulielmakis E Yakovlev VS Cavalieri AL Uiberacker M Pervak V Apolonski A Kienberger R Kleineberg U Krausz F 《Science (New York, N.Y.)》2007,317(5839):769-775
Electrons emit light, carry electric current, and bind atoms together to form molecules. Insight into and control of their atomic-scale motion are the key to understanding the functioning of biological systems, developing efficient sources of x-ray light, and speeding up electronics. Capturing and steering this electron motion require attosecond resolution and control, respectively (1 attosecond = 10(-18) seconds). A recent revolution in technology has afforded these capabilities: Controlled light waves can steer electrons inside and around atoms, marking the birth of lightwave electronics. Isolated attosecond pulses, well reproduced and fully characterized, demonstrate the power of the new technology. Controlled few-cycle light waves and synchronized attosecond pulses constitute its key tools. We review the current state of lightwave electronics and highlight some future directions. 相似文献