共查询到20条相似文献，搜索用时 46 毫秒
1.
I Zeljkovic Z Xu J Wen G Gu RS Markiewicz JE Hoffman 《Science (New York, N.Y.)》2012,337(6092):320-323
High-temperature cuprate superconductors display unexpected nanoscale inhomogeneity in essential properties such as pseudogap energy, Fermi surface, and even superconducting critical temperature. Theoretical explanations for this inhomogeneity have ranged from chemical disorder to spontaneous electronic phase separation. We extend the energy range of scanning tunneling spectroscopy on Bi(2+y)Sr(2-y)CaCu(2)O(8+x), allowing a complete mapping of two types of interstitial oxygen dopants and vacancies at the apical oxygen site. We show that the nanoscale spatial variations in the pseudogap states are correlated with disorder in these dopant concentrations, particularly that of apical oxygen vacancies. 相似文献
2.
Qazilbash MM Brehm M Chae BG Ho PC Andreev GO Kim BJ Yun SJ Balatsky AV Maple MB Keilmann F Kim HT Basov DN 《Science (New York, N.Y.)》2007,318(5857):1750-1753
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nanoscale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasi-particle mass in the metallic puddles. The experimental approach used sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems. 相似文献
3.
A theory of the electronic properties of doped fullerenes is proposed in which electronic correlation effects within single fullerene molecules play a central role, and qualitative predictions are made which, if verified, would support this hypothesis. Depending on the effective intrafulllerene electron-electron repulsion and the interfullerene hopping amplitudes (which should depend on the dopant species, among other things), the calculations indicate the possibilities of singlet superconductivity and ferromagnetism. 相似文献
4.
The confined electronic structure of nanoscale materials has increasingly been shown to induce behavior quite distinct from that of bulk analogs. Direct atomic-scale visualization of nanowires of zinc oxide was achieved through their unique pancake-type diffraction by using four-dimensional (4D) ultrafast electron crystallography. After electronic excitation of this wide-gap photonic material, the wires were found to exhibit colossal expansions, two orders of magnitude higher than that expected at thermal equilibrium; the expansion is highly anisotropic, a quasi-one-dimensional behavior, and is facilitated by the induced antibonding character. By reducing the density of nanowires, the expansions reach even larger values and occur at shorter times, suggesting a decrease of the structural constraint in transient atomic motions. This unanticipated ultrafast carrier-driven expansion highlights the optoelectronic consequences of nanoscale morphologies. 相似文献
5.
Zhao L He R Rim KT Schiros T Kim KS Zhou H Gutiérrez C Chockalingam SP Arguello CJ Pálová L Nordlund D Hybertsen MS Reichman DR Heinz TF Kim P Pinczuk A Flynn GW Pasupathy AN 《Science (New York, N.Y.)》2011,333(6045):999-1003
In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration. 相似文献
6.
Nanoparticles may contain unusual forms of structural disorder that can substantially modify materials properties and thus cannot solely be considered as small pieces of bulk material. We have developed a method to quantify intermediate-range order in 3.4-nanometer-diameter zinc sulfide nanoparticles and show that structural coherence is lost over distances beyond 2 nanometers. The zinc-sulfur Einstein vibration frequency in the nanoparticles is substantially higher than that in the bulk zinc sulfide, implying structural stiffening. This cannot be explained by the observed 1% radial compression and must be primarily due to inhomogeneous internal strain caused by competing relaxations from an irregular surface. The methods developed here are generally applicable to the characterization of nanoscale solids, many of which may exhibit complex disorder and strain. 相似文献
7.
REVIEW The role of defects as essential entities in semiconductor materials is reviewed. Early experiments with semiconductors were hampered by the extreme sensitivity of the electronic properties to minute concentrations of impurities. Semiconductors were viewed as a family of solids with irreproducible properties. Scientific efforts overcame this idiosyncrasy and turned the art of impurity doping into today's exceedingly useful and reproducible technology that is used to control precisely electrical conductivity, composition, and minority-carrier lifetimes over wide ranges. Native defects such as vacancies and self-interstitials control basic processes, foremost self- and dopant diffusion. The structural properties of dislocations and higher dimensional defects have been studied with atomic resolution, but a thorough theoretical understanding of their electronic properties is incomplete. Reactions between defects within the host lattices are increasingly better understood and are used for gettering and electrical passivation of unwanted impurities. Metastable defects such as DX centers and the EL2-related arsenic antisite are briefly discussed. The recent development of isotopically controlled semiconductors has created new research opportunities in this field. 相似文献
8.
We report a method for controllably attaching an arbitrary number of charge dopant atoms directly to a single, isolated molecule. Charge-donating K atoms adsorbed on a silver surface were reversibly attached to a C60 molecule by moving it over K atoms with a scanning tunneling microscope tip. Spectroscopic measurements reveal that each attached K atom donates a constant amount of charge (approximately 0.6 electron charge) to the C60 host, thereby enabling its molecular electronic structure to be precisely and reversibly tuned. 相似文献
9.
Morris CA Anderson ML Stroud RM Merzbacher CI Rolison DR 《Science (New York, N.Y.)》1999,284(5414):622-624
Low-density nanoscale mesoporous composites may be readily synthesized by adding a colloidal or dispersed solid to an about-to-gel silica sol. The silica sol can "glue" a range of chemically and physically diverse particles into the three-dimensional silica network formed upon gelation. If the composite gel is supercritically dried so as to maintain the high porosity of the wet gel, a composite aerogel is formed in which the nanoscopic surface and bulk properties of each component are retained in the solid composite. The volume fraction of the second solid can be varied above or below a percolation threshold to tune the transport properties of the composite aerogel and thereby design nanoscale materials for chemical, electronic, and optical applications. 相似文献
10.
Ahn JH Kim HS Lee KJ Jeon S Kang SJ Sun Y Nuzzo RG Rogers JA 《Science (New York, N.Y.)》2006,314(5806):1754-1757
We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques. 相似文献
11.
Ozbay E 《Science (New York, N.Y.)》2006,311(5758):189-193
Electronic circuits provide us with the ability to control the transport and storage of electrons. However, the performance of electronic circuits is now becoming rather limited when digital information needs to be sent from one point to another. Photonics offers an effective solution to this problem by implementing optical communication systems based on optical fibers and photonic circuits. Unfortunately, the micrometer-scale bulky components of photonics have limited the integration of these components into electronic chips, which are now measured in nanometers. Surface plasmon-based circuits, which merge electronics and photonics at the nanoscale, may offer a solution to this size-compatibility problem. Here we review the current status and future prospects of plasmonics in various applications including plasmonic chips, light generation, and nanolithography. 相似文献
12.
We report atomic-scale characterization of the pseudogap state in a high-Tc superconductor, Bi2Sr2CaCu2O(8+delta). The electronic states at low energies within the pseudogap exhibit spatial modulations having an energy-independent incommensurate periodicity. These patterns, which are oriented along the copper-oxygen bond directions, appear to be a consequence of an electronic ordering phenomenon, the observation of which correlates with the pseudogap in the density of electronic states. Our results provide a stringent test for various ordering scenarios in the cuprates, which have been central in the debate on the nature of the pseudogap and the complex electronic phase diagram of these compounds. 相似文献
13.
Functional nanoscale electronic devices assembled using silicon nanowire building blocks 总被引：1，自引：0，他引：1
Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing. 相似文献
14.
纳米级Ni/Fe颗粒降解四氯化碳批实验研究 总被引：6，自引：0，他引：6
本文阐述了实验室合成纳米Fe和Ni／Fe双金属(直径为1-100hm)的有效方法，BET方法测得其比表面积为52．61m^2／g。并用制得的纳米颗粒对四氯化碳(CT)进行还原性脱氯的批实验，结果表明与微米级铁相比，纳米颗粒在固液比(0．4g／50mL)相对较低的条件下，对cT有明显的脱氯作用。反应进行1h，纳米Ni／Fe，纳米Fe和铸铁屑的脱氯率分别为98％，84％和65％；纳米Ni／Fe和纳米Fe产生的中间产物三氯甲烷(TCM)最大量分别为25％和59％，随之TCM又逐渐下降，尤其是纳米Ni／Fe在很短时间内，将TCM快速完全脱氯且产生27％甲烷CH4)和15％二氯甲烷(DCM)，并对DCM没有明显的脱氯作用。由于催化剂Ni的存在，大大降低了反应活化能，加快了脱氯速率，更重要的是，降低了反应副产物产量。 相似文献
15.
The structural and electronic effects of lead substitution in the high-temperature superconducting materials Pb(x)Bi(2-x)Sr(2)CaCu(2)O(8) have been characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Large-area STM images of the Bi(Pb)-O layers show that lead substitution distorts and disorders the one-dimensional superlattice found in these materials. Atomic-resolution images indicate that extra oxygen atoms are present in the Bi(Pb)-O layers. STS data show that the electronic structure of the Bi(Pb)-O layers is insensitive to lead substitution within +/-0.5 electron volt of the Fermi level; however, a systematic decrease in the density of states is observed at approximately 1 electron volt above the Fermi level. Because the superconducting transition temperatures are independent of x(Pb) (x 相似文献
16.
One-dimensional nanostructures, such as nanowires and nanotubes, represent the smallest dimension for efficient transport of electrons and excitons and thus are ideal building blocks for hierarchical assembly of functional nanoscale electronic and photonic structures. We report an approach for the hierarchical assembly of one-dimensional nanostructures into well-defined functional networks. We show that nanowires can be assembled into parallel arrays with control of the average separation and, by combining fluidic alignment with surface-patterning techniques, that it is also possible to control periodicity. In addition, complex crossed nanowire arrays can be prepared with layer-by-layer assembly with different flow directions for sequential steps. Transport studies show that the crossed nanowire arrays form electrically conducting networks, with individually addressable device function at each cross point. 相似文献
17.
本文根据电子商务发展的状况,引入介绍了P2P技术,提出了基于P2P的电子商务模式,探讨了这种模式的网络结构,工作过程及关键技术,并与传统服务器模式比较了各自的优缺点. 相似文献
18.
MC McCarthy MJ Travers A Kovacs W Chen SE Novick CA Gottlieb P Thaddeus 《Science (New York, N.Y.)》1997,275(5299):518-520
Two cumulene carbenes, H2C5 and H2C6, were detected in a supersonic molecular beam by Fourier transform microwave spectroscopy. Their rotational and leading centrifugal distortion constants were determined with high accuracy, such that the entire radio spectrum can now be calculated. Like the known carbenes H2C3 and H2C4, both molecules have singlet electronic ground states and linear carbon-chain backbones. They can be produced in sufficiently high concentrations in the laboratory that their electronic spectra, expected to lie in the visible, should be readily detectable by laser spectroscopy. The microwave spectra of other, more exotic isomers may be detectable as well. 相似文献
19.
Pasupathy AN Pushp A Gomes KK Parker CV Wen J Xu Z Gu G Ono S Ando Y Yazdani A 《Science (New York, N.Y.)》2008,320(5873):196-201
Identifying the mechanism of superconductivity in the high-temperature cuprate superconductors is one of the major outstanding problems in physics. We report local measurements of the onset of superconducting pairing in the high-transition temperature (Tc) superconductor Bi2Sr2CaCu2O8+delta using a lattice-tracking spectroscopy technique with a scanning tunneling microscope. We can determine the temperature dependence of the pairing energy gaps, the electronic excitations in the absence of pairing, and the effect of the local coupling of electrons to bosonic excitations. Our measurements reveal that the strength of pairing is determined by the unusual electronic excitations of the normal state, suggesting that strong electron-electron interactions rather than low-energy (<0.1 volts) electron-boson interactions are responsible for superconductivity in the cuprates. 相似文献
20.
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase, which is stabilized by electronic interactions, from the insulating phase, where disorder prevails over the electronic interactions, has been identified. The existence of the quantum critical point leads to a divergence in the density of states of the underlying collective modes at the transition, causing the thermodynamic properties to behave critically as the transition is approached. We show that the interplay of electron-electron interactions and disorder can explain the observed transport properties and the anomalous enhancement of the spin susceptibility near the metal-insulator transition. 相似文献