共查询到20条相似文献，搜索用时 31 毫秒
1.
The surface microstructure of c-axis (Ca,Sr)CuO(2) thin films, grown by laser molecular beam epitaxy on SrTiO(3)(001) substrates, was studied by ultrahigh-vacuum scanning tunneling microscopy (STM). Images were obtained for codeposited Ca1-xSrxCuO(2) thin films, which show a layered-type growth mode. The surfaces consist of atomically flat terraces separated by steps that are one unit cell high. A pronounced dependence of the growth mechanism on the Sr/Ca ratio of the films was observed. Atomic resolution STM images of the CuO(2) sheets in the ab plane show a square lattice with an in-plane spacing of 4 angstroms; the lattice contains different concentrations of point defects, depending on the polarity of the sample-tip bias. 相似文献
2.
Bales GS Bruinsma R Eklund EA Karunasiri RP Rudnick J Zangwill A 《Science (New York, N.Y.)》1990,249(4966):264-268
Thin films that are grown by the process of sputtering are, by and large, quite unlike the smooth, featureless structures that one might expect. In general, these films have a complicated surface morphology and an extended network of grooves and voids in their interiors. Such features can have a profound effect on the physical properties of a thin film. The surface irregularities and the bulk defects are the result of a growth instability due to competitive shadowing, an effect that also plays a role in geological processes such as erosion. For amorphous thin films, the shadow instability can be described by a remarkably simple model, which can be shown to reproduce many important observed characteristics of thin film morphology. 相似文献
3.
Jin S Tiefel TH McCormack M Fastnacht RA Ramesh R Chen LH 《Science (New York, N.Y.)》1994,264(5157):413-415
A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial films that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent near 77 kelvin and approximately 1300 percent near room temperature. Such a phenomenon could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized. Possible mechanisms for the observed effect are discussed. 相似文献
4.
Biomimetic Pathways for Assembling Inorganic Thin Films 总被引：3，自引：0，他引：3
IA Aksay M Trau S Manne I Honma N Yao L Zhou P Fenter PM Eisenberger SM Gruner 《Science (New York, N.Y.)》1996,273(5277):892-898
Living organisms construct various forms of laminated nanocomposites through directed nucleation and growth of inorganics at self-assembled organic templates at temperatures below 100°C and in aqueous solutions. Recent research has focused on the use of functionalized organic surfaces to form continuous thin films of single-phase ceramics. Continuous thin films of mesostructured silicates have also been formed on hydrophobic and hydrophilic surfaces through a two-step mechanism. First, under acidic conditions, surfactant micellar structures are self-assembled at the solid/liquid interface, and second, inorganic precursors condense to form an inorganic-organic nanocomposite. Epitaxial coordination of adsorbed surfactant tubules is observed on mica and graphite substrates, whereas a random arrangement is observed on amorphous silica. The ability to process ceramic-organic nanocomposite films by these methods provides new technological opportunities. 相似文献
5.
Xiang XD Hou JG Briceño G Vareka WA Mostovoy R Zettl A Crespi VH Cohen ML 《Science (New York, N.Y.)》1992,256(5060):1190-1191
Sizable single crystals of C(6O) have been synthesized and doped with potassium. Above the superconducting transition temperature T(c), the electrical resistivity p(T) displays a classic metal-like temperature dependence. The transition to the superconducting state at T(c) = 19.8 K is extremely sharp, with a transition width DeltaT < 200 mK. In contrast to transport behavior of doped polycrystalline and granular thin films, no anomalous fluctuations are observed near T(c) in single crystal specimens. 相似文献
6.
Epitaxial BiFeO3 multiferroic thin film heterostructures 总被引：2，自引：0，他引：2
Wang J Neaton JB Zheng H Nagarajan V Ogale SB Liu B Viehland D Vaithyanathan V Schlom DG Waghmare UV Spaldin NA Rabe KM Wuttig M Ramesh R 《Science (New York, N.Y.)》2003,299(5613):1719-1722
Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters. 相似文献
7.
Pulsed laser ablation of graphite targets combined with an intense, atomic nitrogen source has been used to prepare C-N thin film materials. The average nitrogen content in the films was systematically varied by controlling atomic nitrogen flux. Rutherford backscattering measurements show that up to 40 percent nitrogen can be incorporated on average into these solids under the present reaction conditions. Photoelectron spectroscopy further indicates that carbon and nitrogen form an unpolarized covalent bond in these C-N materials. Qualitative tests indicate that the C-N solids are thermally robust and hard. In addition, strong electron diffraction is observed from crystallites within the films. Notably, analysis of these diffraction data show that the only viable structure for the C-N crystallites is that of beta-C(3)N(4), a material predicted theoretically to exhibit superhardness. The experimental synthesis of this new C-N material offers exciting prospects for both basic research and engineering applications. 相似文献
8.
利用射频磁控溅射方法,在宝石衬底上制备了非晶态碲镉汞(a-HgCdTe)薄膜。对原生a-HgCdTe薄膜进行了不同退火时间和不同退火温度的热退火,在80～300K温度范围内,分别测量了原生和退火处理后的a-HgCdTe薄膜样品的稳定态光电导,研究了退火时间和退火温度对非晶态HgCdTe薄膜的稳定态光电导和激活能的影响。结果表明,原生和退火a-HgCdTe薄膜的稳定态光电导具有热激活特性;随着退火时间增加或退火温度升高,a-HgCdTe薄膜的晶化程度提高,导致光电导增大,光电导激活能降低。利用非晶-多晶转变机制讨论了实验结果。 相似文献
9.
Thin films often present domain structures whose detailed evolution is a subject of debate. We analyze the evolution of copper films, which contain both rotational and stacking domains, on ruthenium. Real-time observation by low-energy electron microscopy shows that the stacking domains evolve in a seemingly complex way. Not only do the stacking boundaries move in preferred directions, but their motion is extremely uneven and they become stuck when they reach rotational boundaries. We show that this behavior occurs because the stacking-boundary motion is impeded by threading dislocations. This study underscores how the coarse-scale evolution of thin films can be controlled by defects. 相似文献
10.
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic. 相似文献
11.
用热蒸发技术在玻璃基片上沉积一层sn薄膜,在真空条件下,将其在150～300℃下硫化30．60min．对在不同温度和时间下硫化的薄膜进行结构、成分和表面形貌分析,结果表明：在不同温度和不同时间下硫化,所得到的薄膜在物相结构、成分和表面形貌上都存在差异．当硫化温度为240℃、硫化时间为45min时,所制得的薄膜为正交结构的SnS多晶薄膜,其均匀性、致密性以及对基片的附着力都较好,具有（111）方向优先生长,薄膜粒径在200～800nm,且晶格常数与标样的数值吻合很好． 相似文献
12.
Epitaxial growth of single-crystal gadolinium oxide dielectric thin films on gallium arsenide is reported. The gadolinium oxide film has a cubic structure isomorphic to manganese oxide and is (110)-oriented in single domain on the (100) gallium arsenide surface. The gadolinium oxide film has a dielectric constant of approximately 10, with low leakage current densities of about 10(-9) to 10(-10) amperes per square centimeter at zero bias. Typical breakdown field is 4 megavolts per centimeter for an oxide film 185 angstroms thick and 10 megavolts per centimeter for an oxide 45 angstroms thick. Both accumulation and inversion layers were observed in the gadolinium oxide-gallium arsenide metal oxide semiconductor diodes, using capacitance-voltage measurements. The ability to grow thin single-crystal oxide films on gallium arsenide with a low interfacial density of states has great potential impact on the electronic industry of compound semiconductors. 相似文献
13.
Sailor MJ Ginsburg EJ Gorman CB Kumar A Grubbs RH Lewis NS 《Science (New York, N.Y.)》1990,249(4973):1146-1149
The optical and electronic properties of thin films of the solution-processible polymer poly-(CH(3))(3)Si-cyclooctatetraene are presented. This conjugated polymer is based on a polyacetylene backbone with (CH(3))(3)Si side groups. Thin transparent films have been cast onto n-doped silicon (n-Si) substrates and doped with iodine to form surfacebarrier solar cells. The devices produce photovoltages that are at the theoretical limit and that are much greater than can be obtained from n-Si contacts with conventional metals. Two methods for forming layered polymeric materials, one involving the spincoating of preformed polymers and the other comprising the sequential polymerization of different monomers, are also described. An organic polymer analog of a metal/insulator/metal capacitor has been constructed with the latter method. 相似文献
14.
Guo Y Zhang YF Bao XY Han TZ Tang Z Zhang LX Zhu WG Wang EG Niu Q Qiu ZQ Jia JF Zhao ZX Xue QK 《Science (New York, N.Y.)》2004,306(5703):1915-1917
We have fabricated ultrathin lead films on silicon substrates with atomic-scale control of the thickness over a macroscopic area. We observed oscillatory behavior of the superconducting transition temperature when the film thickness was increased by one atomic layer at a time. This oscillating behavior was shown to be a manifestation of the Fabry-Perot interference modes of electron de Broglie waves (quantum well states) in the films, which modulate the electron density of states near the Fermi level and the electron-phonon coupling, which are the two factors that control superconductivity transitions. This result suggests the possibility of modifying superconductivity and other physical properties of a thin film by exploiting well-controlled and thickness-dependent quantum size effects. 相似文献
15.
Fluorescence microscopy of nanoscale silver oxide (Ag2O) reveals strong photoactivated emission for excitation wavelengths shorter than 520 nanometers. Although blinking and characteristic emission patterns demonstrate single-nanoparticle observation, large-scale dynamic color changes were also observed, even from the same nanoparticle. Identical behavior was observed in oxidized thin silver films that enable Ag2O particles to grow at high density from silver islands. Data were readily written to these films with blue excitation; stored data could be nondestructively read with the strong red fluorescence resulting from green (wavelengths longer than 520 nanometers) excitation. The individual luminescent species are thought to be silver nanoclusters that are photochemically generated from the oxide. 相似文献
16.
Eom CB Cava RJ Fleming RM Phillips JM Vandover RB Marshall JH Hsu JW Krajewski JJ Peck WF 《Science (New York, N.Y.)》1992,258(5089):1766-1769
Single-crystal epitaxial thin films of the isotropic metallic oxides Sr1-xCaxRuO(3) (0 相似文献
17.
The surface microstructures of c-axis-oriented films of YBa(2)Cu(3)O(7), deposited by off-axis magnetron sputtering on MgO and SrTiO(3) single crystal (100) substrates, have been investigated with scanning tunneling microscopy and atomic force microscopy. There is strong evidence that the films nucleate as islands and grow by adding material to the edge of a spirally rising step. This results in columnar grains, each of which contains a screw dislocation at its center. This microstructure may be of significance in determining superconducting properties such as critical current, and represents a significant difference between thin films (especially those grown in situ) and bulk materials. 相似文献
18.
Bulk YBa(2)Cu(3)O(7-delta) superconductors, under certain processing conditions such as melt texturing, exhibit a very high dislocation density of 10(9) to 10(10) per square centimeter. In addition, the density of low-angle grain boundaries in such samples can be significantly increased (to less than 700-nanometer spacing) through a dispersion of submicrometer-sized Y(2)BaCuO(5) inclusions. These defect densities are comparable to those in high critical current thin films as revealed through scanning tunneling microscopy, and yet the critical current densities in the bulk materials (at 77 kelvin and a field of 1 tesla for example) remain at a 10(4) amperes per square centimeter level, about two orders of magnitude lower than in thin films. The results imply that these defect density levels are not significant enough to explain the difference in flux pinning strength between the thin film and bulk materials. The observation of spiral-like growth of the superconductor phase in bulk Y-Ba-Cu-O is also reported. 相似文献
19.
Blanchet GB Fincher CR Jackson CL Shah SI Gardner KH 《Science (New York, N.Y.)》1993,262(5134):719-721
The formation of high-quality thin films of polytetrafluoroethylene (PTFE) is important in many applications ranging from material reinforcement to molecular electronics. Laser ablation, a technique widely used to deposit a variety of inorganic materials, can also be used as a simple and highly versatile method for forming thin polymer films. The data presented show that PTFE films can be produced on various supports by the evaporation of a solid PTFE target with a pulsed ultraviolet laser. The composition of the ablation plume suggests that PTFE ablation and subsequent film formation occur by way of a laser-induced pyrolitic decomposition with subsequent repolymerization. The polymer films produced by this method are composed of amorphous and highly crystalline regions, the latter being predominantly in a chain-folded configuration with the molecular axis aligned parallel to the substrate surface. 相似文献
20.
An electrooptical memory effect is observed with solid thin films of the photoconductor zinc-octakis(beta-decoxyethyl) porphyrin (ZnODEP) sandwiched between two optically transparent electrodes. Upon irradiation with the simultaneous application of an electric field, electron-hole pairs are generated and separated within the photoconductive layer. These electron-hole pairs become "frozen" within the films when the irradiation is interrupted. These trapped charges can be released by irradiation of the cell, resulting in a transient short-circuit photocurrent. No cross talk between adjacent memory elements separated by approximately 0.2 micrometer (a density of 3 gigabits per square centimeter) was detected. The charge storage system is robust and nonvolatile. The response time for the write-read beam is in the subnanosecond range, and no refreshing is required for long-term retention of trapped charges. 相似文献