共查询到20条相似文献，搜索用时 15 毫秒
1.
Jonietz F Mühlbauer S Pfleiderer C Neubauer A Münzer W Bauer A Adams T Georgii R Böni P Duine RA Everschor K Garst M Rosch A 《Science (New York, N.Y.)》2010,330(6011):1648-1651
Spin manipulation using electric currents is one of the most promising directions in the field of spintronics. We used neutron scattering to observe the influence of an electric current on the magnetic structure in a bulk material. In the skyrmion lattice of manganese silicon, where the spins form a lattice of magnetic vortices similar to the vortex lattice in type II superconductors, we observe the rotation of the diffraction pattern in response to currents that are over five orders of magnitude smaller than those typically applied in experimental studies on current-driven magnetization dynamics in nanostructures. We attribute our observations to an extremely efficient coupling of inhomogeneous spin currents to topologically stable knots in spin structures. 相似文献
2.
Taguchi Y Oohara Y Yoshizawa H Nagaosa N Tokura Y 《Science (New York, N.Y.)》2001,291(5513):2573-2576
An electron hopping on non-coplanar spin sites with spin chirality obtains a complex phase factor (Berry phase) in its quantum mechanical amplitude that acts as an internal magnetic field, and is predicted to manifest itself in the Hall effect when it is not cancelled. The present combined work of transport measurement, neutron scattering, and theoretical calculation provides evidence that the gigantic anomalous Hall effect observed in Nd2Mo2O7, a pyrochlore ferromagnet with geometrically frustrated lattice structure, is mostly due to the spin chirality and the associated Berry phase originating from the Mo spin tilting. 相似文献
3.
Wunderlich J Park BG Irvine AC Zârbo LP Rozkotová E Nemec P Novák V Sinova J Jungwirth T 《Science (New York, N.Y.)》2010,330(6012):1801-1804
The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer. 相似文献
4.
Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect. 相似文献
5.
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation. 相似文献
6.
Krivorotov IN Emley NC Sankey JC Kiselev SI Ralph DC Buhrman RA 《Science (New York, N.Y.)》2005,307(5707):228-231
We present time-resolved measurements of gigahertz-scale magnetic dynamics caused by torque from a spin-polarized current. By working in the time domain, we determined the motion of the magnetic moment throughout the process of spin-transfer-driven switching, and we measured turn-on times of steady-state precessional modes. Time-resolved studies of magnetic relaxation allow for the direct measurement of magnetic damping in a nanomagnet and prove that this damping can be controlled electrically using spin-polarized currents. 相似文献
7.
We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed. 相似文献
8.
Artificial spin ice, made up of planar nanostructured arrays of simple ferromagnetic bars, is a playground for rich physics associated with the spin alignment of the bars and spin texture associated with the magnetic frustration at the bar vertices. The phase diagram is exotic, showing magnetic monopole-like defects and liquid and solid phases of spins arranged in loop states with predicted chiral order. We show that magnetotransport measurements in connected honeycomb structures yield the onset of an anomalous Hall signal at 50 kelvin. The temperature scale can be attributed to the long-range dipolar ice phase. The topological Hall signal arises because chiral loops form at the sample edges, indicating a generic route to exotic states via nanoarray edge structure. 相似文献
9.
Abanin DA Morozov SV Ponomarenko LA Gorbachev RV Mayorov AS Katsnelson MI Watanabe K Taniguchi T Novoselov KS Levitov LS Geim AK 《Science (New York, N.Y.)》2011,332(6027):328-330
Transport measurements have been a powerful tool for discovering electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observed a large nonlocal response near the Dirac point in fields as low as 0.1 tesla, which persisted up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by the lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point. 相似文献
10.
Quantum spin hall insulator state in HgTe quantum wells 总被引：1，自引：0，他引：1
König M Wiedmann S Brüne C Roth A Buhmann H Molenkamp LW Qi XL Zhang SC 《Science (New York, N.Y.)》2007,318(5851):766-770
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect. 相似文献
11.
The single-particle energy spectra of graphene and its bilayer counterpart exhibit multiple degeneracies that arise through inherent symmetries. Interactions among charge carriers should spontaneously break these symmetries and lead to ordered states that exhibit energy gaps. In the quantum Hall regime, these states are predicted to be ferromagnetic in nature, whereby the system becomes spin polarized, layer polarized, or both. The parabolic dispersion of bilayer graphene makes it susceptible to interaction-induced symmetry breaking even at zero magnetic field. We investigated the underlying order of the various broken-symmetry states in bilayer graphene suspended between top and bottom gate electrodes. We deduced the order parameter of the various quantum Hall ferromagnetic states by controllably breaking the spin and sublattice symmetries. At small carrier density, we identified three distinct broken-symmetry states, one of which is consistent with either spontaneously broken time-reversal symmetry or spontaneously broken rotational symmetry. 相似文献
12.
Krause S Berbil-Bautista L Herzog G Bode M Wiesendanger R 《Science (New York, N.Y.)》2007,317(5844):1537-1540
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism. 相似文献
13.
The fractional quantum Hall (FQH) effect at filling factor ν = 5/2 has recently come under close scrutiny, as its ground state may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. However, its microscopic origin remains unknown, and candidate model wave functions include those with undesirable abelian statistics. We report direct measurements of the electron spin polarization of the ν = 5/2 FQH state using resistively detected nuclear magnetic resonance. We find the system to be fully polarized, which unambiguously rules out the most likely abelian contender and lends strong support for the ν = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first excited Landau level underlying the physics at ν = 5/2. 相似文献
14.
Graphene provides a rich platform to study many-body effects, owing to its massless chiral charge carriers and the fourfold degeneracy arising from their spin and valley degrees of freedom. We use a scanning single-electron transistor to measure the local electronic compressibility of suspended graphene, and we observed an unusual pattern of incompressible fractional quantum Hall states that follows the standard composite fermion sequence between filling factors ν = 0 and 1 but involves only even-numerator fractions between ν = 1 and 2. We further investigated this surprising hierarchy by extracting the corresponding energy gaps as a function of the magnetic field. The sequence and relative strengths of the fractional quantum Hall states provide insight into the interplay between electronic correlations and the inherent symmetries of graphene. 相似文献
15.
We have detected a spin-dependent displacement perpendicular to the refractive index gradient for photons passing through an air-glass interface. The effect is the photonic version of the spin Hall effect in electronic systems, indicating the universality of the effect for particles of different nature. Treating the effect as a weak measurement of the spin projection of the photons, we used a preselection and postselection technique on the spin state to enhance the original displacement by nearly four orders of magnitude, attaining sensitivity to displacements of approximately 1 angstrom. The spin Hall effect can be used for manipulating photonic angular momentum states, and the measurement technique holds promise for precision metrology. 相似文献
16.
Cho A 《Science (New York, N.Y.)》2005,310(5747):420
A magnetic field can push heat sideways, skewing its path. The odd phenomenon mimics a piece of basic physics known as the "Hall effect," in which a magnetic field exerts a sideways force on flowing electric current. But researchers aren't sure how a magnetic field diverts heat. 相似文献
17.
Fang Z Nagaosa N Takahashi KS Asamitsu A Mathieu R Ogasawara T Yamada H Kawasaki M Tokura Y Terakura K 《Science (New York, N.Y.)》2003,302(5642):92-95
Efforts to find the magnetic monopole in real space have been made in cosmic rays and in particle accelerators, but there has not yet been any firm evidence for its existence because of its very heavy mass, approximately 10(16) giga-electron volts. We show that the magnetic monopole can appear in the crystal momentum space of solids in the accessible low-energy region (approximately 0.1 to 1 electron volts) in the context of the anomalous Hall effect. We report experimental results together with first-principles calculations on the ferromagnetic crystal SrRuO3 that provide evidence for the magnetic monopole in the crystal momentum space. 相似文献
18.
Spintronics relies on the ability to transport and use the spin properties of an electron rather than its charge. We describe a spin ratchet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground-state energetics of a single-electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency by using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents. 相似文献
19.
A new formulation of the current within the London approximation allows the calculation of ring currents in topologically complex molecules. Application of this theory to C(60) demonstrates the existence of remarkable pi electron ring currents. Paramagnetic currents, in size comparable to the ones in benzene, flow within the pentagons, whereas weaker diamagnetic currents flow all around the C.(60) molecule. The overall vanishing ring-current magnetic susceptibility results from a cancellation of diamagnetic and paramagnetic contributions. The presence of ring currents significantly affects chemical shifts as measured in nuclear magnetic resonance experiments. In contrast to the magnetic susceptibility, which is a property of the molecule as a whole, chemical shifts are sensitive to the local magnetic field and the effect of ring currents does not vanish. 相似文献
20.
C Betthausen T Dollinger H Saarikoski V Kolkovsky G Karczewski T Wojtowicz K Richter D Weiss 《Science (New York, N.Y.)》2012,337(6092):324-327
Spin-transistor designs relying on spin-orbit interaction suffer from low signal levels resulting from low spin-injection efficiency and fast spin decay. Here, we present an alternative approach in which spin information is protected by propagating this information adiabatically. We demonstrate the validity of our approach in a cadmium manganese telluride diluted magnetic semiconductor quantum well structure in which efficient spin transport is observed over device distances of 50 micrometers. The device is turned "off" by introducing diabatic Landau-Zener transitions that lead to a backscattering of spins, which are controlled by a combination of a helical and a homogeneous magnetic field. In contrast to other spin-transistor designs, we find that our concept is tolerant against disorder. 相似文献