共查询到20条相似文献，搜索用时 31 毫秒
1.
Johnson M 《Science (New York, N.Y.)》1993,260(5106):320-323
A thin ferromagnetic film can be used to polarize the spin axes of the electrons carrying an electric current in a manner loosely analogous with a light polarizer. When such a film is fabricated on a gold film, a nonequilibrium population of spin-polarized electrons is built up in the gold causing a "spin bottleneck" effect. The addition of a second ferromagnetic film results in a device whose output voltage depends on the orientation of the spins. 相似文献
2.
Crook R Prance J Thomas KJ Chorley SJ Farrer I Ritchie DA Pepper M Smith CG 《Science (New York, N.Y.)》2006,312(5778):1359-1362
We present data from an induced gallium arsenide (GaAs) quantum wire that exhibits an additional conductance plateau at 0.5(2e2/h), where e is the charge of an electron and h is Planck's constant, in zero magnetic field. The plateau was most pronounced when the potential landscape was tuned to be symmetric by using low-temperature scanning-probe techniques. Source-drain energy spectroscopy and temperature response support the hypothesis that the origin of the plateau is the spontaneous spin-polarization of the transport electrons: a ferromagnetic phase. Such devices may have applications in the field of spintronics to either generate or detect a spin-polarized current without the complications associated with external magnetic fields or magnetic materials. 相似文献
3.
Kawakami RK Kato Y Hanson M Malajovich I Stephens JM Johnston-Halperin E Salis G Gossard AC Awschalom DD 《Science (New York, N.Y.)》2001,294(5540):131-134
We examine how a ferromagnetic layer affects the coherent electron spin dynamics in a neighboring gallium arsenide semiconductor. Ultrafast optical pump-probe measurements reveal that the spin dynamics are unexpectedly dominated by hyperpolarized nuclear spins that align along the ferromagnet's magnetization. We find evidence that photoexcited carriers acquire spin-polarization from the ferromagnet, and dynamically polarize these nuclear spins. The resulting hyperfine fields are as high as 9000 gauss in small external fields (less than 1000 gauss), enabling ferromagnetic control of local electron spin coherence. 相似文献
4.
We demonstrate a quantum coherent electron spin filter by directly measuring the spin polarization of emitted current. The spin filter consists of an open quantum dot in an in-plane magnetic field; the in-plane field gives the two spin directions different Fermi wavelengths resulting in spin-dependent quantum interference of transport through the device. The gate voltage is used to select the preferentially transmitted spin, thus setting the polarity of the filter. This provides a fully electrical method for the creation and detection of spin-polarized currents. Polarizations of emitted current as high as 70% for both spin directions (either aligned or anti-aligned with the external field) are observed. 相似文献
5.
Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling. The amplitude of the oscillation is so large that even the sign of the tunnel magnetoresistance alternates. The oscillation period depends on the applied bias voltage, reflecting the energy band structure of Cu. The results are encouraging for the development of spin-dependent resonant tunneling devices. 相似文献
6.
Lappas A Prassides K Vavekis K Arcon D Blinc R Cevc P Amato A Feyerherm R Gygax FN Schenck A 《Science (New York, N.Y.)》1995,267(5205):1799-1802
The zero-field muon spin relaxation technique has been used in the direct observation of spontaneous magnetic order below a Curie temperature (T(c)) of approximately 16.1 kelvin in the fullerene charge-transfer salt (tetrakisdimethylaminoethylene)C(60) [(TDAE)C(60)]. Coherent ordering of the electronic magnetic moments leads to a local field of 68(1) gauss at the muon site at 3.2 kelvin (parentheses indicate the error in the last digit). Substantial spatially inhomogeneous effects are manifested in the distribution of the local fields, whose width amounts to 48(2) gauss at the same temperature. The temperature evolution of the internal magnetic field below the freezing temperature mirrors that of the saturation magnetization, closely following the behavior expected for collective spin wave (magnon) excitations. The transition to a ferromagnetic state with a T(c) higher than that of any other organic material is now authenticated. 相似文献
7.
Yamanouchi M Ieda J Matsukura F Barnes SE Maekawa S Ohno H 《Science (New York, N.Y.)》2007,317(5845):1726-1729
Magnetic domain wall motion induced by magnetic fields and spin-polarized electrical currents is experimentally well established. A full understanding of the underlying mechanisms, however, remains elusive. For the ferromagnetic semiconductor (Ga,Mn)As, we have measured and compared such motions in the thermally activated subthreshold, or "creep," regime, where the velocity obeys an Arrhenius scaling law. Within this law, the clearly different exponents of the current and field reflect different universality classes, showing that the drive mechanisms are fundamentally different. 相似文献
8.
LaBella VP Bullock DW Ding Z Emery C Venkatesan A Oliver WF Salamo GJ Thibado PM Mortazavi M 《Science (New York, N.Y.)》2001,292(5521):1518-1521
We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, whereas in a 10-nanometer-wide region around a [111]-oriented step the injection efficiency is reduced by a factor of 6. Alternatively, the spin-relaxation lifetime was reduced by a factor of 12. This reduction is associated with the metallic nature of the step edge. This study advances the realization of using both the charge and spin of the electron in future semiconductor devices. 相似文献
9.
Spintronics relies on the ability to transport and use the spin properties of an electron rather than its charge. We describe a spin ratchet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground-state energetics of a single-electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency by using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents. 相似文献
10.
Quantitative bulk ferromagnetic behavior has been established for the molecular/organic solid [Fe(III)(C(5)Me(5))(2)].(+)[TCNE].(-). Above 16 K the dominant magnetic interactions are along a 1-D chain and, near T(c), 3-D bulk effects as evidenced by the value of the critical exponents dominate the susceptibility. The extended McConnell model was developed and provides the synthetic chemist with guidance for making new molecular materials to study cooperative magnetic coupling in systems. Assuming the electron-transfer excitation arises from the POMO, ferromagnetic coupling by the McConnell mechanism requires stable radicals (neutral, cations/anions, or ions with small diamagnetic counterions) with a non-half-filled POMO. The lowest excited state formed via virtual charge transfer (retro or forward) must also have the same spin multiplicity and mix with the ground state. These requirements limit the structure of a radical to D(2d) or C>/=(3) symmetry where symmetry breaking distortions do not occur. Intrinsic doubly and triply degenerate orbitals are not necessary and accidental degeneracies suffice. To achieve bulk ferromagnetism, ferromagnetic coupling must be established throughout the solid and a microscopic model has been discussed. These requirements are met by [Fe(III)(C(5)Me(5))(2)].(+)[TCNE].(-). Additionally this model suggests that the Ni(III) and Cr(III) analogs should be antiferromagnetic and ferrimagnetic, respectively, as preliminary data suggest. Additional studies are necessary to test and further develop the consequences of these concepts. Some molecular/organic solids comprised of linear chains of alternating metallocenium donors (D) and cyanocarbon acceptors (A) with spin state S = 1/2 (...D.(+)A.(-)D.(+)A.(-)...) exhibit cooperative magnetic phenomena, that is, ferro-, antiferro-, ferri-, and metamagnetism. For [Fe(III)(C(5)Me(5))(2)].(+)[TCNE](-). (Me = methyl; TCNE = tetracyanoethylene), bulk ferromagnetic behavior is observed below the Curie temperature of 4.8 K. A model of configuration mixing of the lowest charge-transfer excited state with the ground state was developed to understand the magnetic coupling as a function of electron configuration and direction of charge transfer. This model predicts that ferromagnetic coupling requires stable radicals with a non-half-filled degenerate valence orbital and a charge-transfer excited state with the same spin multiplicity that mixes with the ground state. Ferromagnetic coupling must dominate in all directions to achieve a bulk ferromagnet. Thus, the primary, secondary, and tertiary structures are crucial considerations for the design of molecular/organic ferromagnets. 相似文献
11.
Heinze S Bode M Kubetzka A Pietzsch O Nie X Blugel S Wiesendanger R 《Science (New York, N.Y.)》2000,288(5472):1805-1808
A two-dimensional antiferromagnetic structure within a pseudomorphic monolayer film of chemically identical manganese atoms on tungsten(110) was observed with atomic resolution by spin-polarized scanning tunneling microscopy at 16 kelvin. A magnetic superstructure changes the translational symmetry of the surface lattice with respect to the chemical unit cell. It is shown, with the aid of first-principles calculations, that as a result of this, spin-polarized tunneling electrons give rise to an image corresponding to the magnetic superstructure and not to the chemical unit cell. These investigations demonstrate a powerful technique for the understanding of complicated magnetic configurations of nanomagnets and thin films engineered from ferromagnetic and antiferromagnetic materials used for magnetoelectronics. 相似文献
12.
ZSBP梭式爆破保护装置 总被引：1，自引：1，他引：0
文中介绍了一种ＺＳＢＰ梭式爆破保护装置,该装置与气,液联动紧急截断阀相比,其优点是造价低,响应速度可以调整,关闭严密,密封性好,流阻小,安装方向不限及安装环境不限,根据需要可装有清管器结构。 相似文献
13.
Göhler B Hamelbeck V Markus TZ Kettner M Hanne GF Vager Z Naaman R Zacharias H 《Science (New York, N.Y.)》2011,331(6019):894-897
In electron-transfer processes, spin effects normally are seen either in magnetic materials or in systems containing heavy atoms that facilitate spin-orbit coupling. We report spin-selective transmission of electrons through self-assembled monolayers of double-stranded DNA on gold. By directly measuring the spin of the transmitted electrons with a Mott polarimeter, we found spin polarizations exceeding 60% at room temperature. The spin-polarized photoelectrons were observed even when the photoelectrons were generated with unpolarized light. The observed spin selectivity at room temperature was extremely high as compared with other known spin filters. The spin filtration efficiency depended on the length of the DNA in the monolayer and its organization. 相似文献
14.
V Aksyuk FF Balakirev GS Boebinger PL Gammel RC Haddon DJ Bishop 《Science (New York, N.Y.)》1998,280(5364):720-722
A silicon micromechanical magnetometer was constructed and successfully used in 60-tesla pulsed magnetic fields of less than 100-millisecond duration. The device is small, inexpensive to fabricate, and easy to use. It features a fast mechanical response (up to 50,000 hertz) and extremely high sensitivity yet is relatively robust against electrical and mechanical noise. Quantum oscillations in the magnetization of a 1-microgram sample of an organic superconductor, kappa-[bis(ethylenedithio)tetrathiafulvalene]2Cu(NCS)2, have been observed with this device. 相似文献
15.
Crooker SA Furis M Lou X Adelmann C Smith DL Palmstrøm CJ Crowell PA 《Science (New York, N.Y.)》2005,309(5744):2191-2195
We directly imaged electrical spin injection and accumulation in the gallium arsenide channel of lateral spin-transport devices, which have ferromagnetic source and drain tunnel-barrier contacts. The emission of spins from the source was observed, and a region of spin accumulation was imaged near the ferromagnetic drain contact. Both injected and accumulated spins have the same orientation (antiparallel to the contact magnetization), and we show that the accumulated spin polarization flows away from the drain (against the net electron current), indicating that electron spins are polarized by reflection from the ferromagnetic drain contact. The electrical conductance can be modulated by controlling the spin orientation of optically injected electrons flowing through the drain. 相似文献
16.
Spin transfer appears to be a promising tool for improving spintronics devices. Experiments that quantitatively access the magnitude of the spin transfer are required for a fundamental understanding of this phenomenon. By inductively measuring spin waves propagating along a permalloy strip subjected to a large electrical current, we observed a current-induced spin wave Doppler shift that we relate to the adiabatic spin transfer torque. Because spin waves provide a well-defined system for performing spin transfer, we anticipate that they could be used as an accurate probe of spin-polarized transport in various itinerant ferromagnets. 相似文献
17.
As electrons are injected at various energies into ferromagnetic material with their spin polarization vector perpendicular to the axis of the magnetization, we observe precessional motion of the spin polarization on the femtosecond time scale. Because of angular momentum conservation, the magnetization vector must precess as well. We show that spin injection will generate the precessional magnetization reversal in nanosized ferromagnetic bits. At reasonable injected current densities this occurs on the picosecond time scale. 相似文献
18.
Eom J Cho H Kang W Campman KL Gossard AC Bichler M Wegscheider W 《Science (New York, N.Y.)》2000,289(5488):2320-2323
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction nu = 1/3) and spin-unpolarized (nu = 2/5) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic. 相似文献
19.
Krause S Berbil-Bautista L Herzog G Bode M Wiesendanger R 《Science (New York, N.Y.)》2007,317(5844):1537-1540
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism. 相似文献
20.
In several metals, including URhGe, superconductivity has recently been observed to appear and coexist with ferromagnetism at temperatures well below that at which the ferromagnetic state forms. However, the material characteristics leading to such a state of coexistence have not yet been fully elucidated. We report that in URhGe there is a magnetic transition where the direction of the spin axis changes when a magnetic field of 12 tesla is applied parallel to the crystal b axis. We also report that a second pocket of superconductivity occurs at low temperature for a range of fields enveloping this magnetic transition, well above the field of 2 tesla at which superconductivity is first destroyed. Our findings strongly suggest that excitations in which the spins rotate stimulate superconductivity in the neighborhood of a quantum phase transition under high magnetic field. 相似文献