共查询到20条相似文献，搜索用时 740 毫秒
1.
Rueckes T Kim K Joselevich E Tseng GY Cheung CL Lieber CM 《Science (New York, N.Y.)》2000,289(5476):94-97
A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10(12) elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit. 相似文献
2.
Chen Z Appenzeller J Lin YM Sippel-Oakley J Rinzler AG Tang J Wind SJ Solomon PM Avouris P 《Science (New York, N.Y.)》2006,311(5768):1735
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used. 相似文献
3.
To find use in electronics, single-walled carbon nanotubes need to be efficiently separated by electronic type and aligned to ensure optimal and reproducible electronic properties. We report the fabrication of single-walled carbon nanotube (SWNT) network field-effect transistors, deposited from solution, possessing controllable topology and an on/off ratio as high as 900,000. The spin-assisted alignment and density of the SWNTs are tuned by different surfaces that effectively vary the degree of interaction with surface functionalities in the device channel. This leads to a self-sorted SWNT network in which nanotube chirality separation and simultaneous control of density and alignment occur in one step during device fabrication. Micro-Raman experiments corroborate device results as a function of surface chemistry, indicating enrichment of the specific SWNT electronic type absorbed onto the modified dielectric. 相似文献
4.
Yang H Heo J Park S Song HJ Seo DH Byun KE Kim P Yoo I Chung HJ Kim K 《Science (New York, N.Y.)》2012,336(6085):1140-1143
Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volt by adjusting graphene's work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits. 相似文献
5.
Organic field-effect transistors based on pentacene single crystals, prepared with an amorphous aluminum oxide gate insulator, are capable of ambipolar operation and can be used for the preparation of complementary inverter circuits. The field-effect mobilities of carriers in these transistors increase from 2.7 and 1.7 square centimeters per volt per second at room temperature up to 1200 and 320 square centimeters per volt per second at low temperatures for hole and electron transport, respectively, following a power-law dependence. The possible simplification of the fabrication process of complementary logic circuits with these transistors, together with the high carrier mobilities, may be seen as another step toward applications of plastic electronics. 相似文献
6.
McCarthy MA Liu B Donoghue EP Kravchenko I Kim DY So F Rinzler AG 《Science (New York, N.Y.)》2011,332(6029):570-573
Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels. 相似文献
7.
The thiophene oligomer alpha-hexathienylene (alpha-6T) has been successfully used as the active semiconducting material in thin-film transistors. Field-induced conductivity in thin-film transistors with alpha-6T active layers occurs only near the interfacial plane, whereas the residual conductivity caused by unintentional doping scales with the thickness of the layer. The two-dimensional nature of the field-induced conductivity is due not to any anisotropy in transport with respect to any molecular axis but to interface effects. Optimized methods of device fabrication have resulted in high field-effect mobilities and on/off current ratios of > 10(6). The current densities and switching speeds are good enough to allow consideration of these devices in practical large-area electronic circuits. 相似文献
8.
Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or "ropes" of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs. 相似文献
9.
Coskun UC Wei TC Vishveshwara S Goldbart PM Bezryadin A 《Science (New York, N.Y.)》2004,304(5674):1132-1134
We report experiments on quantum dot single-electron-tunneling (SET) transistors made from short multiwall nanotubes and threaded by magnetic flux. Such systems allow us to probe the electronic energy spectrum of the nanotube and its dependence on the magnetic field. Evidence is provided for the interconversion between gapped (semiconducting) and ungapped (metallic) states. Our tubes exhibit h/e-period magnetic flux dependence, in agreement with simple tight-binding calculations. 相似文献
10.
Zhang G Qi P Wang X Lu Y Li X Tu R Bangsaruntip S Mann D Zhang L Dai H 《Science (New York, N.Y.)》2006,314(5801):974-977
Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits. 相似文献
11.
Biological organisms perform complex information processing and control tasks using sophisticated biochemical circuits, yet the engineering of such circuits remains ineffective compared with that of electronic circuits. To systematically create complex yet reliable circuits, electrical engineers use digital logic, wherein gates and subcircuits are composed modularly and signal restoration prevents signal degradation. We report the design and experimental implementation of DNA-based digital logic circuits. We demonstrate AND, OR, and NOT gates, signal restoration, amplification, feedback, and cascading. Gate design and circuit construction is modular. The gates use single-stranded nucleic acids as inputs and outputs, and the mechanism relies exclusively on sequence recognition and strand displacement. Biological nucleic acids such as microRNAs can serve as inputs, suggesting applications in biotechnology and bioengineering. 相似文献
12.
Carbon nanotube quantum resistors 总被引：1，自引：0，他引：1
The conductance of multiwalled carbon nanotubes (MWNTs) was found to be quantized. The experimental method involved measuring the conductance of nanotubes by replacing the tip of a scanning probe microscope with a nanotube fiber, which could be lowered into a liquid metal to establish a gentle electrical contact with a nanotube at the tip of the fiber. The conductance of arc-produced MWNTs is one unit of the conductance quantum G0 = 2e2/h = (12.9 kilohms)-1. The nanotubes conduct current ballistically and do not dissipate heat. The nanotubes, which are typically 15 nanometers wide and 4 micrometers long, are several orders of magnitude greater in size and stability than other typical room-temperature quantum conductors. Extremely high stable current densities, J > 10(7) amperes per square centimeter, have been attained. 相似文献
13.
We report that the flow of a liquid on single-walled carbon nanotube bundles induces a voltage in the sample along the direction of the flow. The voltage that was produced fit a logarithmic velocity dependence over nearly six decades of velocity. The magnitude of the voltage depended sensitively on the ionic conductivity and on the polar nature of the liquid. Our measurements suggest that the dominant mechanism responsible for this highly nonlinear response involves a direct forcing of the free charge carriers in the nanotubes by the fluctuating Coulombic field of the liquid flowing past the nanotubes. We propose an explanation based on pulsating asymmetric ratchets. Our work highlights the device potential for nanotubes as sensitive flow sensors and for energy conversion. 相似文献
14.
Zhang M Fang S Zakhidov AA Lee SB Aliev AE Williams CD Atkinson KR Baughman RH 《Science (New York, N.Y.)》2005,309(5738):1215-1219
Individual carbon nanotubes are like minute bits of string, and many trillions of these invisible strings must be assembled to make useful macroscopic articles. We demonstrated such assembly at rates above 7 meters per minute by cooperatively rotating carbon nanotubes in vertically oriented nanotube arrays (forests) and made 5-centimeter-wide, meter-long transparent sheets. These self-supporting nanotube sheets are initially formed as a highly anisotropic electronically conducting aerogel that can be densified into strong sheets that are as thin as 50 nanometers. The measured gravimetric strength of orthogonally oriented sheet arrays exceeds that of sheets of high-strength steel. These nanotube sheets have been used in laboratory demonstrations for the microwave bonding of plastics and for making transparent, highly elastomeric electrodes; planar sources of polarized broad-band radiation; conducting appliqués; and flexible organic light-emitting diodes. 相似文献
15.
Koziol K Vilatela J Moisala A Motta M Cunniff P Sennett M Windle A 《Science (New York, N.Y.)》2007,318(5858):1892-1895
With their impressive individual properties, carbon nanotubes should form high-performance fibers. We explored the roles of nanotube length and structure, fiber density, and nanotube orientation in achieving optimum mechanical properties. We found that carbon nanotube fiber, spun directly and continuously from gas phase as an aerogel, combines high strength and high stiffness (axial elastic modulus), with an energy to breakage (toughness) considerably greater than that of any commercial high-strength fiber. Different levels of carbon nanotube orientation, fiber density, and mechanical properties can be achieved by drawing the aerogel at various winding rates. The mechanical data obtained demonstrate the considerable potential of carbon nanotube assemblies in the quest for maximal mechanical performance. The statistical aspects of the mechanical data reveal the deleterious effect of defects and indicate strategies for future work. 相似文献
16.
Macroscopic fibers and ribbons of oriented carbon nanotubes 总被引：1，自引：0，他引：1
Vigolo B Pénicaud A Coulon C Sauder C Pailler R Journet C Bernier P Poulin P 《Science (New York, N.Y.)》2000,290(5495):1331-1334
A simple method was used to assemble single-walled carbon nanotubes into indefinitely long ribbons and fibers. The processing consists of dispersing the nanotubes in surfactant solutions, recondensing the nanotubes in the flow of a polymer solution to form a nanotube mesh, and then collating this mesh to a nanotube fiber. Flow-induced alignment may lead to a preferential orientation of the nanotubes in the mesh that has the form of a ribbon. Unlike classical carbon fibers, the nanotube fibers can be strongly bent without breaking. Their obtained elastic modulus is 10 times higher than the modulus of high-quality bucky paper. 相似文献
17.
Wunderlich J Park BG Irvine AC Zârbo LP Rozkotová E Nemec P Novák V Sinova J Jungwirth T 《Science (New York, N.Y.)》2010,330(6012):1801-1804
The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer. 相似文献
18.
Keyes RW 《Science (New York, N.Y.)》1985,230(4722):138-144
Numerous development projects aimed at replacing the silicon technology that dominates computer logic with a faster alternative have been conducted throughout the past 25 years. None has succeeded. The alternatives are usually based on a device that switches very rapidly, and they neglect many other requirements of computer logic. In this article the essential physical factors that account for the success of transistors in digital applications are identified, as are the factors that are absent in proposed alternative devices. 相似文献
19.
We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges with possibly well-defined zigzag or armchair-edge structures. Electrical transport experiments showed that, unlike single-walled carbon nanotubes, all of the sub-10-nanometer GNRs produced were semiconductors and afforded graphene field effect transistors with on-off ratios of about 10(7) at room temperature. 相似文献
20.
Sekitani T Noguchi Y Hata K Fukushima T Aida T Someya T 《Science (New York, N.Y.)》2008,321(5895):1468-1472
By using an ionic liquid of 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, we uniformly dispersed single-walled carbon nanotubes (SWNTs) as chemically stable dopants in a vinylidene fluoride-hexafluoropropylene copolymer matrix to form a composite film. We found that the SWNT content can be increased up to 20 weight percent without reducing the mechanical flexibility or softness of the copolymer. The SWNT composite film was coated with dimethyl-siloxane-based rubber, which exhibited a conductivity of 57 siemens per centimeter and a stretchability of 134%. Further, the elastic conductor was integrated with printed organic transistors to fabricate a rubberlike active matrix with an effective area of 20 by 20 square centimeters. The active matrix sheet can be uniaxially and biaxially stretched by 70% without mechanical or electrical damage. The elastic conductor allows for the construction of electronic integrated circuits, which can be mounted anywhere, including arbitrary curved surfaces and movable parts, such as the joints of a robot's arm. 相似文献