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1.
Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10(3) to 10(4); and with current density approaching 3 x 10(4) amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.  相似文献   

2.
半导体温差发电器发电电气特性试验研究   总被引:1,自引:0,他引:1  
文章根据塞贝克效应(Seebeck effect)、珀尔帖效应(Peltier effect)、汤姆逊效应(Thomson effect)原理,制作了半导体温差发电器系统,通过试验测试获得了在不同温度等级下的电气特性。结果表明,开路电压和负载电压随温度升高呈线性上升趋势。当温度一定时,电流随负载变化呈几何对数增长,并找到了电压越低输出功率越大的功率特性。  相似文献   

3.
Lorenz MR 《Science (New York, N.Y.)》1968,159(3822):1419-1423
Electroluminescence from semiconductor diode light sources can occur as a result of the application of a direct current at a low voltage to a suitably doped crystal containing a p-n junction. In recent years, it has become apparent that in some materials the efficiency of conversion of electric energy to visible light can be appreciably high. Since light-emitting diodes are compatible with the present electronic circuitry, they have many potential applications.  相似文献   

4.
PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.  相似文献   

5.
牟群英 《安徽农学通报》2007,13(5):165-166,107
本文通过试验对电热地板在运行过程中的温度、电流、电消耗功率进行了测试与分析.结果表明:在地板接通电源后的短时间内,电热膜的温度迅速上升,其电流和电消耗功率迅速下降;随着运行时间的延长,电热膜温度上升和电流、电消耗功率下降的速率减缓;当运行时间在40min以上后, 发热膜温度、电流、电消耗功率和地板表面的温度都达到并维持在一个稳定值附近;电热地板供暖具有安全、清洁、舒适、安装方便、节约能源等独特优点,是一种较为优越的供暖方式,具有较大的应用和发展前景.  相似文献   

6.
The semiconductor liquid junction cell n-GaAs/0.8M K(2)Se-0.1M K(2)Se(2)-1M KOH/C has been shown to attain 9 percent photovoltaic power conversion efficiency in sunlight. Accelerated tests under 3100 degrees K light sources of several solar intensities indicate very low photocorrosion currents and high output stability.  相似文献   

7.
By trapping molecules between two gold electrodes with a temperature difference across them, the junction Seebeck coefficients of 1,4-benzenedithiol (BDT), 4,4'-dibenzenedithiol, and 4,4'-tribenzenedithiol in contact with gold were measured at room temperature to be +8.7 +/- 2.1 microvolts per kelvin (muV/K), +12.9 +/- 2.2 muV/K, and +14.2 +/- 3.2 muV/K, respectively (where the error is the full width half maximum of the statistical distributions). The positive sign unambiguously indicates p-type (hole) conduction in these heterojunctions, whereas the Au Fermi level position for Au-BDT-Au junctions was identified to be 1.2 eV above the highest occupied molecular orbital level of BDT. The ability to study thermoelectricity in molecular junctions provides the opportunity to address these fundamental unanswered questions about their electronic structure and to begin exploring molecular thermoelectric energy conversion.  相似文献   

8.
The electronic properties of single-walled carbon nanotubes are shown here to be extremely sensitive to the chemical environment. Exposure to air or oxygen dramatically influences the nanotubes' electrical resistance, thermoelectric power, and local density of states, as determined by transport measurements and scanning tunneling spectroscopy. These electronic parameters can be reversibly "tuned" by surprisingly small concentrations of adsorbed gases, and an apparently semiconducting nanotube can be converted into an apparent metal through such exposure. These results, although demonstrating that nanotubes could find use as sensitive chemical gas sensors, likewise indicate that many supposedly intrinsic properties measured on as-prepared nanotubes may be severely compromised by extrinsic air exposure effects.  相似文献   

9.
Hasuo S 《Science (New York, N.Y.)》1992,255(5042):301-305
High-quality Josephson junctions, with both electrodes made from niobium and with an aluminum-oxide insulating barrier, were introduced in 1983. This niobium junction is very stable, reliable, controllable, and reproducible. Because of these excellent characteristics, these junctions can be applied to large-scale integrated (LSI) circuits, such as microprocessors having a few thousand gates and a few kilobits of memory. These circuits operate much faster and consume less power than any semiconductor circuit now available. Integrated Josephson circuits are now being tested in a closed-cycle refrigerator. The next step is to design a special-purpose, small-scale Josephson computer and to demonstrate its high performance.  相似文献   

10.
利用热电制冷原理对LED汽车的前照灯进行系统散热模拟,研究LED的结温,半导体制冷器的工作状态,散热器热阻之间的关系。模拟结果表明,利用多级半导体制冷给汽车LED前照灯散热比较有实用价值。  相似文献   

11.
The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.  相似文献   

12.
Heller A 《Science (New York, N.Y.)》1984,223(4641):1141-1148
Sunlight is directly converted to chemical energy in hydrogen-evolving photoelectrochemical cells with semiconductor electrodes. Their Gibbs free energy efficiency of solar-to-hydrogen conversion, 13.3 percent, exceeds the solar-to-fuel conversion efficiency of green plants and approaches the solar-to-electrical conversion efficiency of the best p-n junction cells. In hydrogen-evolving photoelectrodes, electron-hole pairs photogenerated in the semiconductor are separated at electrical microcontacts between the semiconductor and group VIII metal catalyst islands. Conversion is efficient when the island diameters are small relative to the wave-lengths of sunlight exciting the semiconductor; when the island spacings are smaller than the diffusion length of electrons at the semiconductor surface; when the height of the potential energy barriers that separate the photogenerated electrons from holes at the semiconductor surface is raised by hydrogen alloying of the islands; when radiationless recombination of electron-hole pairs at the semiconductor-solution interface between the islands is suppressed by controlling the semiconductor surface chemistry; and when the semiconductor has an appropriate band gap (1.0 to 1.8 electron volts) for efficient solar conversion.  相似文献   

13.
Accurate determination of the solute content of millimicroliter samples of biological fluids can conveniently be made with an instrument consisting of a thermoelectric cooler controlled by an electronic proportional servo system. Accuracies to within less than 2 percent have been achieved in determining the osmolarity of body fluids.  相似文献   

14.
The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPb(m)SbTe(2+m) may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of approximately 2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPb(m)SbTe(2+m) material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.  相似文献   

15.
Artificial nanostructures, each composed of a copper(II) phthalocyanine (CuPc) molecule bonded to two gold atomic chains with a controlled gap, were assembled on a NiAl(110) surface by manipulation of individual gold atoms and CuPc molecules with a scanning tunneling microscope. The electronic densities of states of these hybrid structures were measured by spatially resolved electronic spectroscopy and systematically tuned by varying the number of gold atoms in the chains one by one. The present approach provides structural images and electronic characterization of the metal-molecule-metal junction, thereby elucidating the nature of the contacts between the molecule and metal in this junction.  相似文献   

16.
Ceramics are a distinct class ofmaterials whose properties range from extreme hardness to unique electrical behavior. New methods of creating thin films of complex oxides and electronic ceramics allow the integration of these properties with semiconductor technology and raise the possibility of a new range of electronic devices.  相似文献   

17.
We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques.  相似文献   

18.
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.  相似文献   

19.
对热电热泵进行了热力分析,并通过改变热媒流量、热媒温差、电流输入等运行参数,对热电热泵进行了实验研究.结果表明:在近室温条件下,热电热泵作局部供热应用时,其供热系数达到1.6以上,比较直接电加热的形式,热电热泵装置不失为一种节能途径.在此基础上,研制了热电热泵快热式热水器,对热水器各部件的匹配进行优化,并对各环节进行了传热强化.该热水器独特的热媒流程一方面回收了排水废热,同时提高了热电热泵性能.对样机进行性能测试表明,样机比普通电热水器节省电耗40%以上.  相似文献   

20.
Electronic devices primarily use electronic rather than ionic charge carriers. Using soft-contact lamination, we fabricated ionic junctions between two organic semiconductors with mobile anions and cations, respectively. Mobile ionic charge was successfully deployed to control the direction of electronic current flow in semiconductor devices. As a result, these devices showed electroluminescence under forward bias and a photovoltage upon illumination with visible light. Thus, ionic charge carriers can enhance the performance of existing electronic devices, as well as enable new functionalities.  相似文献   

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