Abstract: | The measured voltage derivative of the nonlinear resistance of tiny point contacts can be separated into a phonon-emission effect (alpha(2)F) and an analytic functional form (background effect). The alpha(2)F's show structure coincident with bulk phonon densities of states. Values of the integral of 2 alpha(2)F/omega are closely related to literature values. The background effect is related to the impurity concentration of the materials. |