| 退火对非晶态碲镉汞薄膜稳定态光电导的影响 |
| |
| 作者姓名： | 余连杰 史衍丽 李雄军 杨丽丽 邓功荣 何雯瑾 莫镜辉 |
| |
| 作者单位： | 昆明物理研究所,昆明物理研究所,昆明物理研究所,昆明物理研究所,昆明物理研究所,昆明物理研究所,昆明物理研究所 |
| |
| 基金项目： | 云南省面上基金(2008CD176)资助项目 |
| |
| 摘 要： | 利用射频磁控溅射方法,在宝石衬底上制备了非晶态碲镉汞(a-HgCdTe)薄膜。对原生a-HgCdTe薄膜进行了不同退火时间和不同退火温度的热退火,在80～300K温度范围内,分别测量了原生和退火处理后的a-HgCdTe薄膜样品的稳定态光电导,研究了退火时间和退火温度对非晶态HgCdTe薄膜的稳定态光电导和激活能的影响。结果表明,原生和退火a-HgCdTe薄膜的稳定态光电导具有热激活特性;随着退火时间增加或退火温度升高,a-HgCdTe薄膜的晶化程度提高,导致光电导增大,光电导激活能降低。利用非晶-多晶转变机制讨论了实验结果。
|
| 关 键 词： | 非晶态碲镉汞(a-HgCdTe)薄膜 光电导 热退火 非晶-多晶转变 |
Effect of thermal annealing on the steady state photoconductivity of amorphous HgCdTe thin films |
| |
| Authors: | YU Lian-jie SHI Yan-li LI Xiong-jun YANG Li-li DENG Gong-rong HE Wen-jin and MO Jing-hui |
| |
| Institution: | Kunming Institute of Physics,Kunming 650223,China,Kunming Institute of Physics,Kunming 650223,China,Kunming Institute of Physics,Kunming 650223,China,Kunming Institute of Physics,Kunming 650223,China,Kunming Institute of Physics,Kunming 650223,China,Kunming Institute of Physics,Kunming 650223,China and Kunming Institute of Physics,Kunming 650223,China |
| |
| Abstract: | Amorphous HgCdTe(a-HgCdTe) thin films were prepared by radio frequency(RF) sputtered technique on the quartz substrate.The steady state photoconductivity measurements were carried out on as-deposited and thermal annealed a-HgCdTe thin films.Temperature dependence of photoconductivity shows that the photoconductivity is through a thermally activated process in 80-300 K.The effects of annealing on the steady state photoconductivity and the activation energy are studied.An amorphous-crystalline transformation is induced by thermal annealing.The crystallized fraction of a-HgCdTe thin films increases with annealing temperature and annealing time,resulting in increasing steady state photoconductivity and decreasing thermal activation energy of photoconductivity.The experimental results are discussed on the basis of amorphous-crystalline transformation. |
| |
| Keywords: | amorphous HgCdTe(a-HgCdTe) thin film photoconductivity thermal annealing amorphous-crystalline transformation |
|
| 点击此处可从《》浏览原始摘要信息 |
| 点击此处可从《》下载免费的PDF全文 |
|
