首页 | 本学科首页   官方微博 | 高级检索  
     检索      

低温及碳源对拟南芥菜胚愈伤组织诱导和植株再生的影响
引用本文:厉秀茹,王今朝.低温及碳源对拟南芥菜胚愈伤组织诱导和植株再生的影响[J].北京农学院学报,1997,12(3):1-6.
作者姓名:厉秀茹  王今朝
作者单位:北京农学院农学系!北京,102206,北京农学院农学系!北京,102206,北京农学院农学系!北京,102206
摘    要:以低温处理1~4d的野生型拟南芥菜种子胚为外植体,分别培养在附加激素为2,4-D(0.05mg/L),BA(0.05mg/L)的B5和MS两种基础培养基上,每种培养基的碳源分别为蔗糖和葡萄糖.结果发现均有愈伤组织的形成,其中B5+蔗糖培养基有较高的诱导频率;当蔗糖为碳源时,胚外植体先萌发出子叶,然后在下胚轴长出愈伤组织,而改用葡萄糖时,整个胚外植体都形成愈伤组织;将诱导出的愈伤组织转移到B5、MS和1/2MS3种附加2,4-D(0.05mg/L)和BA(0.5mg/L)培养基上进行植株的再生,发现在MS和1/2MS两种培养基上有芽的生成.再将生芽组织转接到1/2MS生根培养基上,均可诱导生根.剥去种皮与低温处理种子有相同的效应,都能打破种子的休眠,这表明低温打破种子休眠的效应部位不是在胚.

关 键 词:拟南芥菜(ArabidopsisthalianaL.)  胚培养  低温处理  碳源  愈伤组织诱导  植株再生

Effects of Cold Treatment and Carbon Sources on Callus Induction and Plantlet Regeneration in Enbryo Explant of Arabidopsis thaliana L.
Li Xiuru, Wang Jinzhao, Cui Haiying.Effects of Cold Treatment and Carbon Sources on Callus Induction and Plantlet Regeneration in Enbryo Explant of Arabidopsis thaliana L.[J].Journal of Beijing Agricultural College,1997,12(3):1-6.
Authors:Li Xiuru  Wang Jinzhao  Cui Haiying
Abstract:Calli were induced from cold-treated mature embryo explants of Arabaopsis thaliana L. which were cultured on B5 or MS medium with different PGR (Plant Growth Regulators) and differents carbon sources. B5+sucrose medium gave the higher induction frequency than that of others medio. When the sucrose was used as the carbon source, the calli produced from hypocotyls of muture embryo explants. Using glucose as a substitute of a carbon source for sucrose, the calli were produced from all parts of embryo explants. Shoots were induced from the calli on 1/2MS and MS medio (2, 4-D 0. 05mg/L and BA 0. 5 mg/L ). Roots were induced from the shoots on 1/2 MS medium. The seed dormancy could be broken by cutting of the seed coat. The result showed that the responsible position of the cold-treated seed is not in mature embryo in Arabidopsis thalianl L.
Keywords:Arabidopsis thaliana L    callus induction  embryo culture  cold treatment  carbon source  plantlet regeneration
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号