Selective etching of metallic carbon nanotubes by gas-phase reaction |
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| Authors: | Zhang Guangyu Qi Pengfei Wang Xinran Lu Yuerui Li Xiaolin Tu Ryan Bangsaruntip Sarunya Mann David Zhang Li Dai Hongjie |
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| Institution: | Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA. |
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| Abstract: | Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits. |
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