硫化温度和时间对SnxSy薄膜结构和成分的影响 |
| |
引用本文: | 林建光,彭少朋,程树英.硫化温度和时间对SnxSy薄膜结构和成分的影响[J].厦门水产学院学报,2010(1):62-66. |
| |
作者姓名: | 林建光 彭少朋 程树英 |
| |
作者单位: | 福州大学物理与信息工程学院,福建福州350108 |
| |
基金项目: | [基金项目]福建省科技厅重点项目(200810019);福建省科技三项项目(2006175062);福州大学人才基金项目(XRC--0736) |
| |
摘 要: | 用热蒸发技术在玻璃基片上沉积一层sn薄膜,在真空条件下,将其在150~300℃下硫化30.60min.对在不同温度和时间下硫化的薄膜进行结构、成分和表面形貌分析,结果表明:在不同温度和不同时间下硫化,所得到的薄膜在物相结构、成分和表面形貌上都存在差异.当硫化温度为240℃、硫化时间为45min时,所制得的薄膜为正交结构的SnS多晶薄膜,其均匀性、致密性以及对基片的附着力都较好,具有(111)方向优先生长,薄膜粒径在200~800nm,且晶格常数与标样的数值吻合很好.
|
关 键 词: | SnxSy 薄膜 硫化温度 硫化时间 |
Influence of Sulphurization Temperature and Time on Structure and Composition of SnxSy Thin Films |
| |
Authors: | LIN Jian-guang PENG Shao-peng CHENG Shu-ying |
| |
Institution: | (College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China) |
| |
Abstract: | SnxSy thin films had been prepared hy a two-step process. This process included the deposi- tion of Sn thin films on glass substrates by thermal evaporation and sulphurization of Sn thin films for 30 - 60 rain in a vacuum condition at different temperatures of 150 - 300 ℃. Their microstructures, composition and morphology at different sulphurization temperatures and time were analyzed. The results showed: there were some differences in phase structure, composition and morphology for the films synthesized at different sulphurization temperatures and time ; the films sulphurized at a temperature of 240 ℃ for 45 min were poly- crystalline SnS films with orthorhombic structure. The SnS films had a strong ( 111 ) preferred orientation and good adhesion to the substrates. They were uniform and their grain size was about 200 -800 nm. The lattice constant of the films was in good agreement with that of the standard sample. |
| |
Keywords: | Snx Sy films sulphurization temperature sulphurization time crystal |
本文献已被 维普 等数据库收录! |