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An integrated logic circuit assembled on a single carbon nanotube
Authors:Chen Zhihong  Appenzeller Joerg  Lin Yu-Ming  Sippel-Oakley Jennifer  Rinzler Andrew G  Tang Jinyao  Wind Shalom J  Solomon Paul M  Avouris Phaedon
Institution:IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Abstract:Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor-type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.
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