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| 碳化硅量子点制备及其活体细胞荧光成像 | |
| 引用本文： | 孙祥鸣,宋月鹏,高东升,李江涛,陈义祥,李 永,许令峰,郭 晶,谭 钺,康田田.碳化硅量子点制备及其活体细胞荧光成像[J].农业工程学报,2012,28(24):260-264. |
| 作者姓名： | 孙祥鸣 宋月鹏 高东升 李江涛 陈义祥 李 永 许令峰 郭 晶 谭 钺 康田田 |
| 作者单位： | 1. 山东农业大学机械与电子工程学院,泰安 271018 2. 山东省园艺机械与装备重点实验室,泰安 271018 3. 中国科学院理化技术研究所,北京 100190 |
| 基金项目： | 国家自然科学基金（51001111）;"十二五"国家支撑计划项目（2011BAD12B02）;山东省现代农业产业技术体系.水果创新团队专项经费。 |
| 摘 要： | 采用化学腐蚀法制备无细胞毒性的SiC量子点荧光材料,以硝酸及氢氟酸为腐蚀剂,通过超声分散及高速离心处理,获得碳化硅量子点水相溶液,对其微观组织、光学性能进行了检测,而后在出芽短梗霉菌(Aureobasidium pulluans)活体细胞上进行了荧光成像,结果表明,碳化硅量子点呈近球型,直径约为2.5nm,小于体材激子波尔直径(5.4nm),光致发光光谱证明了量子限制效应,激发光波长为320～360nm时,发射光强最大。激发光波长增加时,其Photo Luminescence(PL)峰发生红移,而当量子点直径减小时,会导致发射光蓝移。活体细胞荧光成像研究结果表明,该量子点无细胞毒性,对细胞生长生理机能几乎没有任何影响,可以实现活体细胞长时程的荧光成像。同时对其标记特征及原理进行了分析。 |
| 关 键 词： | 碳化硅 荧光 荧光光谱 细胞 碳化硅量子点 荧光成像 化学腐蚀法 光致发光 |
| 收稿时间： | 2012/5/16 0:00:00 |
| 修稿时间： | 2012/9/27 0:00:00 |
Fabrication of silicon carbide quantum dots(SiC QDs) and its fluorescence imaging for living cells |
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| Sun Xiangming,Song Yuepeng,Gao Dongsheng,Li Jiangtao,Chen Yixiang,Li Yong,Xu Lingfeng,Guo Jing,Tan Yue and Kang Tiantian.Fabrication of silicon carbide quantum dots(SiC QDs) and its fluorescence imaging for living cells[J].Transactions of the Chinese Society of Agricultural Engineering,2012,28(24):260-264. | |
| Authors: | Sun Xiangming Song Yuepeng Gao Dongsheng Li Jiangtao Chen Yixiang Li Yong Xu Lingfeng Guo Jing Tan Yue and Kang Tiantian |
| Institution: | 1.Mechanical and Electronic Engineering College,Shandong Agricultural University,Tai’an 271018,China;2.Shandong Provincial Key Laboratory of Horticultural Machineries and Equipments,Tai’an 271018,China;3.Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China) |
| Abstract: | Aqueous silicon carbide quantum dots(QDs) without cytotoxicity were prepared via a simple chemical etching method with the mixture etchants of nitric and hydrofluoric acid and then ultrasonic dispersion and centrifugation. The microstructure and optical properties were measured and fluorescent imaging for living cells of Aureobasidium pulluans was investigated. The microstructure inspection results indicated that silicon carbide QDs were nearly spherical feature, 2.5 nm of diameter which was shorter than its' Bohr diameter(5.4 nm). The remarkable photo luminescence(PL) effect was displayed when it was excited. In the scope of 320 nm to 360 nm for exciting light wavelength, the emission light intensity reached the top. The red shift for PL occured with the increasing of exciting light wavelength. The blue shift of emission light for PL occured with the diameter decreasing of SiC QDs. Further research results indicated that there was no cytotoxicity of SiC QDs and hardly affected the growth, physiological function of the living cells with the potential application of long-time- cultivating image. Moreover, mechanism and specificity of mark of QDs were also analyzed. |
| Keywords: | silicon carbide fluorescence fluorescence spectroscopy cells silicon carbide quantum dots(QDs) fluorescent imaging chemical etching method photo luminescence(PL) |
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